发明授权
- 专利标题： Method for producing a semiconductor laser
- 专利标题（中）： 半导体激光器的制造方法
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申请号： US278395申请日： 1994-07-21
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公开(公告)号： US5523256A公开(公告)日： 1996-06-04
- 发明人: Hideto Adachi , Isao Kidoguchi , Kiyoshi Ohnaka , Satoshi Kamiyama
- 申请人： Hideto Adachi , Isao Kidoguchi , Kiyoshi Ohnaka , Satoshi Kamiyama
- 申请人地址： JPX Osaka
- 专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址： JPX Osaka
- 优先权： JPX5-180174 19930721; JPX5-251566 19931007; JPX5-251567 19931007; JPX5-336373 19931228
- 主分类号： H01S5/065
- IPC分类号： H01S5/065 ; H01S5/10 ; H01S5/20 ; H01S5/22 ; H01S5/223 ; H01S5/323 ; H01L21/20
摘要：
A semiconductor laser according to the present invention includes: a semiconductor substrate; a multilayer structure provided on the semiconductor substrate, the multilayer structure including an active layer, a pair of cladding layers interposing the active layer, and current confining portion for injecting a current into a stripe-shaped predetermined region of the active layer, wherein the current confining portion includes a first current confining layer formed in regions excluding a region corresponding to the predetermined region of the active layer, the first current confining layer having an energy band gap larger than an energy band gap of the active layer and having a refractive index smaller than a refractive index of the active layer.