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    Semiconductor laser device and method of manufacturing the same
    1.
    发明授权
    Semiconductor laser device and method of manufacturing the same 有权
    半导体激光器件及其制造方法

    公开(公告)号：US07139298B2

    公开(公告)日：2006-11-21

    申请号：US10994436

    申请日：2004-11-23

    申请人： Kouji Makita ,  Kenji Yoshikawa ,  Takayuki Kashima ,  Hideto Adachi

    发明人： Kouji Makita ,  Kenji Yoshikawa ,  Takayuki Kashima ,  Hideto Adachi

    IPC分类号： H01S5/00

    CPC分类号： H01S5/22 ,  H01S5/0425 ,  H01S5/222 ,  H01S5/32325

    摘要： The present invention aims to provide a semiconductor laser device which has a structure that is easy to manufacture, a satisfactory temperature characteristic as well as high-speed response characteristic. The device includes the following: an n-type GaAs substrate 101; an n-type AlGaInP cladding layer 102 formed on the n-type GaAs substrate 101; a non-doped quantum well active layer 103; a p-type AlGaInP first cladding layer 104; a p-type GaInP etching stop layer 105; a p-type AlGaInP second cladding layer 106; a p-type GaInP cap layer 107; a p-type GaAs contact layer 108; and an n-type AlInP block layer 109. The device has a ridge portion and convex portions formed on both sides of the ridge portion, and the p-type GaAs contact layer 108 is formed on the ridge portion only.

    摘要翻译： 本发明的目的在于提供一种具有易于制造，令人满意的温度特性以及高速响应特性的结构的半导体激光器件。 该器件包括：n型GaAs衬底101; 形成在n型GaAs衬底101上的n型AlGaInP包层102; 非掺杂量子阱有源层103; p型AlGaInP第一包覆层104; p型GaInP蚀刻停止层105; p型AlGaInP第二包覆层106; p型GaInP覆盖层107; p型GaAs接触层108; 和n型AlInP阻挡层109。 该装置具有形成在脊部两侧的脊部和凸部，仅在脊部形成p型GaAs接触层108。

    Semiconductor laser and method for manufacturing the same
    3.
    发明授权
    Semiconductor laser and method for manufacturing the same 失效
    半导体激光器及其制造方法

    公开(公告)号：US06888870B2

    公开(公告)日：2005-05-03

    申请号：US10210656

    申请日：2002-07-31

    申请人： Koji Makita ,  Hideto Adachi ,  Toshiya Kawata ,  Hiroshi Asaka ,  Osamu Imafuji ,  Toshiya Fukuhisa ,  Akira Takamori

    发明人： Koji Makita ,  Hideto Adachi ,  Toshiya Kawata ,  Hiroshi Asaka ,  Osamu Imafuji ,  Toshiya Fukuhisa ,  Akira Takamori

    IPC分类号： H01S5/16 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/32 ,  H01S5/00

    CPC分类号： H01S5/2231 ,  H01S5/2054 ,  H01S5/2081 ,  H01S5/2206 ,  H01S5/222 ,  H01S5/3211

    摘要： A semiconductor laser has a first conduction-type cladding layer, an active layer, and a second conduction-type cladding layer formed on a first conduction-type semiconductor substrate. The second conduction-type cladding layer has a mesa-type stripe-shaped recessed portion in at least four spots, so as to form a central ridge portion, which constitutes a ridge-type current confinement portion, and two or more lateral ridge portions, which are positioned on both sides of the central ridge portion, have a height larger than to that of the central ridge portion, and include the second conduction-type cladding layer. An insulation film with a lower refractive index than the second conduction-type cladding layer is formed in a pair of stripes disposed respectively in the regions from the side surface of the second conduction-type cladding layer on both side surfaces of the central ridge portion toward the outside. The insulation film is not formed on the central ridge portion.

    摘要翻译： 半导体激光器具有形成在第一导电型半导体基板上的第一导电型包覆层，有源层和第二导电型包覆层。 第二导电型包覆层在至少四个点中具有台面状的条状凹部，以形成构成脊型电流限制部的中心脊部分，以及两个以上的侧脊部， 位于中央脊部的两侧的高度比中心脊部的高度大，并且包括第二导电型包覆层。 具有比第二导电型包覆层低的折射率的绝缘膜分别形成在从第二导电型包覆层的侧表面在中心脊部的两个侧表面上的区域中分别设置的一对条带 外。 绝缘膜不形成在中心脊部上。

    Semiconductor device and method for producing the same
    4.
    发明授权
    Semiconductor device and method for producing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US06671301B1

    公开(公告)日：2003-12-30

    申请号：US09565937

    申请日：2000-05-05

    申请人： Toshikazu Onishi ,  Hideto Adachi ,  Masaya Mannou ,  Akira Takamori

    发明人： Toshikazu Onishi ,  Hideto Adachi ,  Masaya Mannou ,  Akira Takamori

    IPC分类号： H01S500

    CPC分类号： B82Y20/00 ,  H01S5/162 ,  H01S5/2231 ,  H01S5/3425 ,  H01S5/34326

    摘要： A semiconductor laser device including: a semiconductor substrate of a first conductivity type; a cladding layer of the first conductivity type provided on the semiconductor substrate; an active layer provided on the cladding layer of the first conductivity type, the active layer having a super-lattice structure including a disordered region in a vicinity of at least one cavity end face; a first cladding layer of a second conductivity type provided on the active layer; an etching stop layer of the second conductivity type provided on the first cladding layer; and a second cladding layer of the second conductivity type provided on the etching stop layer, the second cladding layer forming a ridge structure, the ridge structure extending along a cavity length direction and having a predetermined width. A concentration of an impurity in the etching stop layer in the vicinity of the at least one cavity end face is greater than a concentration of the impurity in the interior of a cavity and equal to or smaller than about 2×1018 cm−3.

    摘要翻译： 一种半导体激光器件，包括：第一导电类型的半导体衬底; 设置在半导体衬底上的第一导电类型的覆层; 设置在所述第一导电类型的包覆层上的有源层，所述有源层具有在至少一个腔端面附近包括无序区域的超晶格结构; 设置在有源层上的第二导电类型的第一包层; 设置在第一包层上的第二导电类型的蚀刻停止层; 以及设置在所述蚀刻停止层上的所述第二导电类型的第二包层，所述第二包层形成脊结构，所述脊结构沿着空腔长度方向延伸并具有预定宽度。 在至少一个空腔端面附近的蚀刻停止层中的杂质浓度大于空腔内的杂质的浓度，并且等于或小于约2×10 18 cm -3 >。

    Semiconductor laser
    7.
    发明授权
    Semiconductor laser 有权
    半导体激光器

    公开(公告)号：US6151348A

    公开(公告)日：2000-11-21

    申请号：US142424

    申请日：1998-11-17

    申请人： Hideto Adachi ,  Isao Kidoguchi ,  Yasuhito Kumabuchi

    发明人： Hideto Adachi ,  Isao Kidoguchi ,  Yasuhito Kumabuchi

    IPC分类号： H01S5/062 ,  H01S5/065 ,  H01S5/20 ,  H01S5/223 ,  H01S5/32 ,  H01S5/343 ,  H01S3/19

    CPC分类号： B82Y20/00 ,  H01S5/06216 ,  H01S5/20 ,  H01S5/0658 ,  H01S5/2022 ,  H01S5/2231 ,  H01S5/3201 ,  H01S5/3211 ,  H01S5/3218 ,  H01S5/34326

    摘要： A semiconductor laser includes at least an active layer and a saturable absorbing layer, and a compressive strain amount in the saturable absorbing layer is set to be greater than a value of compressive strain in the active layer by about 0.3% or more. Alternatively, a semiconductor laser includes at least an active layer, a saturable absorbing layer, and a light guiding layer disposed in the vicinity of the saturable absorbing layer; and a compressive strain amount in the saturable absorbing layer is greater than a value of compressive strain in the active layer by about 0.3% or more.

    摘要翻译： PCT No.PCT / JP97 / 00643 Sec。 371日期：1998年11月17日 102（e）日期1998年11月17日PCT 1997年3月3日PCT公布。 出版物WO97 / 33351 日期1997年9月12日半导体激光器至少包括有源层和可饱和吸收层，并且可饱和吸收层中的压缩应变量设定为大于有源层中的压缩应变值约0.3％或 更多。 或者，半导体激光器至少包括有源层，可饱和吸收层和设置在可饱和吸收层附近的导光层; 并且可饱和吸收层中的压缩应变量大于活性层中的压缩应变值约0.3％以上。

    Semiconductor laser and method for manufacturing the same
    10.
    发明授权
    Semiconductor laser and method for manufacturing the same 有权
    半导体激光器及其制造方法

    公开(公告)号：US07369593B2

    公开(公告)日：2008-05-06

    申请号：US10920545

    申请日：2004-08-17

    申请人： Kouji Makita ,  Hideto Adachi

    发明人： Kouji Makita ,  Hideto Adachi

    IPC分类号： H01S5/00

    CPC分类号： H01S5/22 ,  H01S5/2205 ,  H01S5/2216 ,  H01S5/2222

    摘要： The semiconductor laser of the present invention includes a first conductivity-type cladding layer, a second conductivity-type cladding layer having at least one ridge structure extending in the direction of a resonator, an active layer disposed between the two cladding layers and a current blocking layer provided so as to cover at least a side face of the ridge structure. The current blocking layer includes a hydrogenated first dielectric film. In the structure having the current blocking layer formed of a dielectric, a light confining efficiency is enhanced, a threshold value of laser oscillation decreases, and current properties during the oscillation at a high temperature and with a high power are improved.

    摘要翻译： 本发明的半导体激光器包括：第一导电型包覆层，具有沿共振器方向延伸的至少一个脊结构的第二导电型包覆层，设置在两个覆层之间的有源层和电流阻塞 层，以覆盖脊结构的至少一个侧面。 电流阻挡层包括氢化的第一介电膜。 在具有由电介质形成的电流阻挡层的结构中，光限制效率提高，激光振荡的阈值降低，并且提高了在高温和高功率下的振荡期间的电流特性。