发明授权
US5523623A Ohmic electrode for a p-type compound semiconductor and a bipolar
transistor incorporating the ohmic electrode
失效
用于p型化合物半导体的欧姆电极和掺有欧姆电极的双极晶体管
- 专利标题： Ohmic electrode for a p-type compound semiconductor and a bipolar transistor incorporating the ohmic electrode
- 专利标题（中）： 用于p型化合物半导体的欧姆电极和掺有欧姆电极的双极晶体管
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申请号： US399180申请日： 1995-03-06
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公开(公告)号： US5523623A公开(公告)日： 1996-06-04
- 发明人: Manabu Yanagihara , Akiyoshi Tamura
- 申请人： Manabu Yanagihara , Akiyoshi Tamura
- 申请人地址： JPX Osaka
- 专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址： JPX Osaka
- 优先权： JPX6-038247 19940309; JPX6-163754 19940715
- 主分类号： H01L21/285
- IPC分类号： H01L21/285 ; H01L21/331 ; H01L29/45 ; H01L29/737
摘要：
An ohmic electrode for a p-type III-V compound semiconductor is disclosed. The ohmic electrode formed on a p-type III-V compound semiconductor layer includes nickel (Ni), titanium (Ti), and platinum (Pt) as main components in an interface between the ohmic electrode and the p-type III-V compound semiconductor layer.
公开/授权文献
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