发明授权
- 专利标题： PN junction trench isolation type semiconductor device
- 专利标题（中）： PN结沟隔离型半导体器件
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申请号： US383672申请日： 1995-02-01
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公开(公告)号： US5525821A公开(公告)日： 1996-06-11
- 发明人: Masana Harada , Katsuhiro Tsukamoto
- 申请人： Masana Harada , Katsuhiro Tsukamoto
- 申请人地址： JPX Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX4-193986 19920721
- 主分类号： H01L21/331
- IPC分类号： H01L21/331 ; H01L21/336 ; H01L29/06 ; H01L29/10 ; H01L29/739 ; H01L29/78
摘要：
There is disclosed a semiconductor device including a plurality of P well regions (4) and a P well region (41) insulated from each other by a plurality of trench isolating layers (10) formed regularly in predetermined spaced relation with each other and having the same depth. The outermost P well region (41) isolatedly formed externally of an outermost trench isolating layer (10A) is made as deep as the trench isolating layers (10) and, accordingly, is made deeper than the P well regions (4) except the outermost P well region (41). This provides for the alleviation of the electric field concentration generated in the bottom edge of the outermost isolating layer of trench structure, thereby achieving the semiconductor device having an improved device breakdown voltage and a method of fabricating the same.
公开/授权文献
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