发明授权
US5527734A Method of manufacturing a semiconductor device by forming pyramid shaped
bumps using a stabilizer
失效
通过使用稳定剂形成金字塔形凸块来制造半导体器件的方法
- 专利标题： Method of manufacturing a semiconductor device by forming pyramid shaped bumps using a stabilizer
- 专利标题（中）： 通过使用稳定剂形成金字塔形凸块来制造半导体器件的方法
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申请号： US764662申请日： 1991-09-24
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公开(公告)号： US5527734A公开(公告)日： 1996-06-18
- 发明人: Andreas M. T. P. van der Putten
- 申请人： Andreas M. T. P. van der Putten
- 申请人地址： NY New York
- 专利权人： U.S. Philips Corporation
- 当前专利权人： U.S. Philips Corporation
- 当前专利权人地址： NY New York
- 优先权： NLX9002163 19901005
- 主分类号： C23C18/31
- IPC分类号： C23C18/31 ; H01L21/288 ; H01L21/60 ; H01L21/441
摘要：
By using an electroless metallization bath to which a stabilizer is added which suppresses the cathodic partial reaction, pyramid-shaped bumps (53) can be grown on the bond pads of semiconductor devices without lateral overgrowth of the coating layer 3. The angle of inclination a is a function of the concentration of the stabilizer.
公开/授权文献
- US5750424A Method for fabricating a CMOS device 公开/授权日：1998-05-12
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