发明授权
- 专利标题： Method of diffusing a metal through a silver electrode to form a protective film on the surface of the electrode
- 专利标题（中）： 通过银电极扩散金属以在电极表面上形成保护膜的方法
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申请号： US480733申请日： 1995-06-07
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公开(公告)号： US5529954A公开(公告)日： 1996-06-25
- 发明人: Tadashi Iijima , Hisako Ono , Yukihiro Ushiku , Akira Nishiyama , Naomi Nakasa
- 申请人： Tadashi Iijima , Hisako Ono , Yukihiro Ushiku , Akira Nishiyama , Naomi Nakasa
- 申请人地址： JPX Kawasaki
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX5-015914 19930105; JPX5-135398 19930513
- 主分类号： H01L21/285
- IPC分类号： H01L21/285 ; H01L21/768 ; H01L23/532 ; H01L21/28
摘要：
A semiconductor device includes a first metal film formed on a semiconductor substrate, a second metal film formed on the first metal film and containing silver as a main component, and a protective film containing a metal element of the first metal film and covering at least the upper surface of the second metal film. The protective film is formed by annealing in an atmosphere containing a predetermined element. That is, the metal element of the first metal film is diffused into the second metal film and reacts with the predetermined element in the atmosphere on the surface of the second metal film, thereby forming the protective film. Aggregation of silver is prevented in the presence of the protective film.