发明授权
- 专利标题： Semiconductor device having a multilayer interconnection structure
- 专利标题（中）： 具有多层互连结构的半导体器件
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申请号： US513253申请日： 1995-08-10
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公开(公告)号： US5530282A公开(公告)日： 1996-06-25
- 发明人: Masahiro Tsuji
- 申请人： Masahiro Tsuji
- 申请人地址： JPX Kyoto
- 专利权人： Rohm Co., Ltd.
- 当前专利权人： Rohm Co., Ltd.
- 当前专利权人地址： JPX Kyoto
- 优先权： JPX5-114063 19930415
- 主分类号： H01L23/50
- IPC分类号： H01L23/50 ; H01L23/495 ; H01L23/48
摘要：
A semiconductor device having a increased freedom of design in the connection between an electrode and one or more inner leads. In a semiconductor device 2, a semiconductor element 4 is fixed onto a die pad 2 which is a part of a lead frame. On the surface of the semiconductor element 4 is formed an electrode (bonding pad) 5, which is electrically connected to an inner lead 3 through a bridge structure 10 comprising an insulating film 11 deposited at a lowermost position and a conductive thin film pattern 12 formed thereon.
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