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    Optically active bicyclo[3.3.0]octane and processes for the preparation thereof
    2.
    发明授权
    Optically active bicyclo[3.3.0]octane and processes for the preparation thereof 失效
    光学活性双环[3.3.0]辛烷及其制备方法

    公开(公告)号：US4871869A

    公开(公告)日：1989-10-03

    申请号：US293414

    申请日：1989-01-04

    申请人： Kenji Mori ,  Masahiro Tsuji

    发明人： Kenji Mori ,  Masahiro Tsuji

    IPC分类号： C07C405/00 ,  C07D317/72 ,  C07F7/18

    CPC分类号： C07D317/72 ,  C07C405/0083 ,  C07F7/1856 ,  Y02P20/582

    摘要： New intermediate, an optically active (1R,5S,6S,7R)-6-tert-butyldiphenylsilyloxmethyl-7-hydroxy-bicyclo[3.3.0]octan-3-one (I) having high optical purity which is useful for the synthesis of an optically active carbacyclin and an optically active pentalenolactone E methyl ester. The compound (I) is also an intermediate compound serving for the purpose of improving the optical purity of (1R,5S,6S,7R)-3,3-ethylenedioxy-6-hydroxymethyl-7-(2'-tetrahydropyranyloxy)bicyclo[3.3.0]octane. The compound (I) is prepared by reacting (1R,5S,6S,7R)-3,3-ethylenedioxy-6-hydroxymethyl-7-(2'-tetrahydropyranyloxy)bicyclo[3.3.0]octane with tert-butylchlorodiphenylsilane in the presence of a base and removing the ethylenedioxy and tetrahydropyranyl groups of the resultant compound under an acid condition.

    High-strength, high-conductivity copper alloy
    3.
    发明授权
    High-strength, high-conductivity copper alloy 失效
    高强度，高导电性铜合金

    公开(公告)号：US4666667A

    公开(公告)日：1987-05-19

    申请号：US844237

    申请日：1986-03-25

    申请人： Morinori Kamio ,  Masahiro Tsuji ,  Hirohito Miyashita

    发明人： Morinori Kamio ,  Masahiro Tsuji ,  Hirohito Miyashita

    IPC分类号： C22C9/00 ,  C22C9/02 ,  H01B1/02

    CPC分类号： C22C9/02 ,  C22F1/08

    摘要： A high-strength, high-conductivity copper alloy comprises, all by weight, from 0.8 to 4.0% of Sn, from more than 0.01 to 0.4% of P, from 0.05 to 1.0% of Ni, from 0.05 to 1.0% of one, two or more elements selected from Al, Hf, Be, Mo, Zn, Te, Pb, Co, Zr, and Nb, and the remainder of Cu and inevitable impurities. The impurities include not more than 0.0020% of oxygen.

    摘要翻译： 高强度，高导电性铜合金全部重量含有Sn：0.8〜4.0％，P：0.01〜0.4％，Ni：0.05〜1.0％，0.05〜1.0％ 选自Al，Hf，Be，Mo，Zn，Te，Pb，Co，Zr和Nb中的两种或更多种元素，其余的Cu和不可避免的杂质。 杂质含有不大于0.0020％的氧气。

    High-strength-conductivity copper alloy
    5.
    发明授权
    High-strength-conductivity copper alloy 失效
    高强度导电铜合金

    公开(公告)号：US4362579A

    公开(公告)日：1982-12-07

    申请号：US219617

    申请日：1980-12-24

    申请人： Masahiro Tsuji

    发明人： Masahiro Tsuji

    IPC分类号： C22C9/00 ,  C22C9/04 ,  H01B1/02 ,  H01H1/025 ,  C22F1/08

    CPC分类号： C22C9/04 ,  H01H1/025

    摘要： A copper alloy with high strength and excellent electrical conductivity, corrosion resistance, and spring qualities, comprises 0.4-8% nickel, 0.1-3% silicon, 10-35% zinc, concomitant impurities, and the remainder copper, all by weight. It further comprises at least one element as an accessory ingredient or ingredients selected from the group consisting of 0.001-0.1 wt % each of phosphorus and arsenic and 0.01-1 wt % each of titanium, chromium, tin, and magnesium. The accessory ingredient or ingredients combinedly account for 0.001-2% of the total weight of the alloy composition.

    摘要翻译： 具有高强度和优异的导电性，耐腐蚀性和弹簧质量的铜合金包括0.4-8％的镍，0.1-3％的硅，10-35％的锌，伴随的杂质，其余的铜都是重量。 其还包含至少一种元素作为辅助成分或选自由磷和砷各自为0.001-0.1重量％和钛，铬，锡和镁各自为0.01-1重量％的组分组成的组分。 辅助成分或成分合成占合金组合物总重量的0.001-2％。

    SEMICONDUCTOR DEVICE
    6.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开
    半导体器件

    公开(公告)号：US20070063334A1

    公开(公告)日：2007-03-22

    申请号：US11469225

    申请日：2006-08-31

    申请人： Kenji Otani ,  Masahiro Tsuji

    发明人： Kenji Otani ,  Masahiro Tsuji

    IPC分类号： H01L23/48

    CPC分类号： H01L23/3128 ,  H01L23/3677 ,  H01L23/4334 ,  H01L23/49517 ,  H01L23/5286 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48471 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/07802 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2224/48227 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/4554

    摘要： In order to minimize a distance from a power supply line and/or a ground line of a semiconductor integrated circuit of a semiconductor device to electrodes of a printed board, at least either a power supply electrode or the ground line of the semiconductor integrated circuit is connected to a metal film through openings provided in a protective film over the power supply electrode. The metal film is exposed on a side of the semiconductor device, adjacent to a printed board on which the semiconductor device is mounted, or on a side thereof, opposite from the printed board, and the metal film is connected a power supply electrode and/or a ground electrode of the printed board through the exposed surface of the metal film. Alternatively, upper and lower metal films connected to each other, with a stress relief film interposed therebetween, may be disposed in place of the metal film, or a metal sheet may be disposed over the metal film. Further, in order to minimize the length of a heat radiation path of the semiconductor integrated circuit of the semiconductor device, the protective film is deposited on the semiconductor integrated circuit, and the metal film is exposed on the side of the semiconductor device, adjacent to the printed board on which the semiconductor device is mounted, or on the side thereof, opposite from the printed board, thereby effecting heat radiation. Alternatively, the upper and lower metal films connected to each other, with the stress relief film interposed therebetween, may be disposed in place of the metal film, or a metal sheet functioning as a heat sink is disposed over the metal film.

    摘要翻译： 为了最小化从半导体器件的半导体集成电路的电源线和/或接地线到印刷电路板的电极的距离，至少半导体集成电路的电源电极或接地线是 通过设置在电源电极上的保护膜中的开口连接到金属膜。 金属膜暴露在与半导体器件安装的印刷电路板相邻的半导体器件的一侧上，或者与印刷电路板相对的侧面上，金属膜与电源电极和/ 或印刷电路板的接地电极通过金属膜的暴露表面。 或者，可以设置彼此连接的上部和下部金属膜，其间插入有应力消除膜，以代替金属膜，或者可以在金属膜上设置金属片。 此外，为了使半导体器件的半导体集成电路的散热路径的长度最小化，保护膜沉积在半导体集成电路上，并且金属膜在半导体器件的侧面露出，邻近 安装有半导体器件的印刷电路板或其一侧与印刷电路板相对，从而实现热辐射。 或者，可以设置彼此连接的上部和下部金属膜，其间设置有应力消除膜，以代替金属膜，或者在金属膜上设置用作散热器的金属片。

    Aerosol composition containing middle-chain fatty acid triglyceride dispersant
    7.
    发明授权
    Aerosol composition containing middle-chain fatty acid triglyceride dispersant 失效
    含有中链脂肪酸甘油三酯分散剂的气溶胶组合物

    公开(公告)号：US06284226B1

    公开(公告)日：2001-09-04

    申请号：US09380601

    申请日：1999-09-14

    申请人： Hideki Ito ,  Masahiro Tsuji ,  Hiromitu Yoshida ,  Fumio Shimojo

    发明人： Hideki Ito ,  Masahiro Tsuji ,  Hiromitu Yoshida ,  Fumio Shimojo

    IPC分类号： A61K912

    CPC分类号： A61K9/008 ,  C07D405/06 ,  Y10S514/826

    摘要： An aerosol product comprising the following compound (A), a middle-chain fatty acid triglyceride and a liquefied hydrofluoroalkane is provided. In the production of an aerosol product using a liquefied hydrofluoroalkane as propellant, the use of a middle-chain fatty acid triglyceride as dispersant insures good dispersion of compound (A) in the propellant. The result is an aerosol product free from variation in the dispensed dose of compound (A).

    摘要翻译： 提供了包含以下化合物（A），中链脂肪酸甘油三酸酯和液化氢氟烷烃的气溶胶产品。 在使用液化氢氟烷烃作为推进剂的气溶胶产品的生产中，使用中链脂肪酸甘油三酯作为分散剂确保化合物（A）在推进剂中的良好分散。结果是在分配的情况下不含变化的气溶胶产品 化合物（A）的剂量。

    Efficient development of an electrostatic latent image
    8.
    发明授权
    Efficient development of an electrostatic latent image 失效
    静电潜像的高效发展

    公开(公告)号：US6016411A

    公开(公告)日：2000-01-18

    申请号：US94986

    申请日：1998-06-15

    申请人： Takahiko Kimura ,  Yoshiki Ichikawa ,  Jun Yamaguchi ,  Masahiro Tsuji ,  Yoshiaki Sanada

    发明人： Takahiko Kimura ,  Yoshiki Ichikawa ,  Jun Yamaguchi ,  Masahiro Tsuji ,  Yoshiaki Sanada

    IPC分类号： G03G15/08 ,  G03G15/09

    CPC分类号： G03G15/09 ,  G03G15/0898

    摘要： A developing apparatus comprises a development housing containing developer and disposed opposite to a carrier for carrying a latent image, and a developing roller rotatably provided in the development housing and rotatively driven in a predetermined direction. The developer in the development housing is carried by the developing roller and the developer carried by the developing roller is applied to the carrier through an opening formed in the development housing. A rotation speed F.beta. of the developing roller is higher than a movement speed F.alpha. of the carrier. A gap .beta. between an opening downstream side wall portion of the development housing and the developing roller is greater than a gap .alpha. between the opening downstream side wall portion and the carrier.

    摘要翻译： 一种显影装置，包括：显影壳体，其容纳显影剂并且与用于承载潜像的载体相对设置;以及显影辊，其可旋转地设置在显影壳体中并沿预定方向旋转驱动。 显影壳体中的显影剂由显影辊承载，并且由显影辊承载的显影剂通过形成在显影壳体中的开口施加到载体。 显影辊的旋转速度Fβ高于载体的移动速度Fα1。 显影壳体的开口下游侧壁部分和显影辊之间的间隙β大于开口下游侧壁部分和载体之间的间隙α。

    Packaging material for electronic components
    10.
    发明授权
    Packaging material for electronic components 失效
    电子元件包装材料

    公开(公告)号：US5698904A

    公开(公告)日：1997-12-16

    申请号：US782447

    申请日：1997-01-13

    申请人： Masahiro Tsuji

    发明人： Masahiro Tsuji

    IPC分类号： H01L23/29 ,  H01L23/31

    CPC分类号： H01L23/295 ,  H01L2924/0002

    摘要： A packaging material for electronic components is provided which inhibits the cracking of a passivation film on an encapsulated chip and inhibits the breaking of an interconnecting metallization pattern in a chip of an electronic component and meets the miniaturization trend for electronic components. The packaging material includes: a resin, and 80% to 93% by weight, relative to the total amount of the packaging material, of a filler made up of particles having an average particle size of 30 .mu.m or less, at least 90% by weight of which are spherically shaped or have rounded ends and/or edges.

    摘要翻译： 提供一种用于电子部件的包装材料，其抑制封装芯片上的钝化膜的破裂，并且抑制电子部件的芯片中的互连金属化图案的断裂，并且满足电子部件的小型化趋势。 包装材料包括：树脂，相对于包装材料的总量为80重量％至93重量％的由平均粒径为30μm以下的颗粒构成的填料为至少90重量％ 其重量为球形或具有圆形端部和/或边缘。