发明授权
US5530674A Structure capable of simultaneously testing redundant and non-redundant memory elements during stress testing of an integrated circuit memory device 失效
能够在集成电路存储器件的压力测试期间同时测试冗余和非冗余存储元件的结构

Structure capable of simultaneously testing redundant and non-redundant
memory elements during stress testing of an integrated circuit memory
device
摘要:
The redundant elements of an integrated circuit memory device having a plurality of redundant and non-redundant elements such as rows, columns, wordlines, and blocks, may be selectively enabled during a stress test mode so that both redundant elements and non-redundant elements may be stress tested concurrently. Enabling capabilities contained within the redundant element circuitry selectively enables the redundant elements when a stress test signal is equal to a predetermined value, indicative of a stress test mode.
公开/授权文献
信息查询
0/0