发明授权
US5534491A Process for preparing a layered structure containing at least one thin
film of oxide superconductor
失效
制备含有至少一层氧化物超导体薄膜的分层结构的方法
- 专利标题: Process for preparing a layered structure containing at least one thin film of oxide superconductor
- 专利标题(中): 制备含有至少一层氧化物超导体薄膜的分层结构的方法
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申请号: US381278申请日: 1995-01-31
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公开(公告)号: US5534491A公开(公告)日: 1996-07-09
- 发明人: Takao Nakamura , Michitomo Iiyama
- 申请人: Takao Nakamura , Michitomo Iiyama
- 申请人地址: JPX Osaka
- 专利权人: Sumitomo Electric Industries, Ltd.
- 当前专利权人: Sumitomo Electric Industries, Ltd.
- 当前专利权人地址: JPX Osaka
- 优先权: JPX3-089616 19910328; JPX3-089617 19910328
- 主分类号: H01L39/24
- IPC分类号: H01L39/24
摘要:
A process for producing a layered structure containing at least one thin film of oxide superconductor (1) such as Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x having a contaminated surface on a substrate (3). The contaminated surface of the thin film of oxide superconductor is heat-treated in an atmosphere containing oxygen of high purity of higher than 5N and a partial pressure of 25 Torr at a temperature of 350.degree. to 700.degree. C. On the thin film of oxide superconductor (1), another thin film (2) of oxide superconductor or non-superconductor is deposited.The resulting structure of layered thin films is used for fabricating superconducting transistor, Josephson junctions, superconducting circuits or the like.
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