公开(公告)号：US08741674B2

公开(公告)日：2014-06-03

申请号：US13335560

申请日：2011-12-22

申请人： Yusuke Yoshizumi ,  Shimpei Takagi ,  Yohei Enya ,  Takashi Kyono ,  Masahiro Adachi ,  Masaki Ueno ,  Takamichi Sumitomo ,  Shinji Tokuyama ,  Koji Katayama ,  Takao Nakamura ,  Takatoshi Ikegami

发明人： Yusuke Yoshizumi ,  Shimpei Takagi ,  Yohei Enya ,  Takashi Kyono ,  Masahiro Adachi ,  Masaki Ueno ,  Takamichi Sumitomo ,  Shinji Tokuyama ,  Koji Katayama ,  Takao Nakamura ,  Takatoshi Ikegami

IPC分类号： H01L21/00 ,  H01L21/8252

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/0202 ,  H01S5/0287 ,  H01S5/3202 ,  H01S2301/14

摘要： Provided is a group-III nitride semiconductor laser device with a laser cavity of high lasing yield, on a semipolar surface of a support base in which the c-axis of a hexagonal group-III nitride is tilted toward the m-axis. First and second fractured faces to form the laser cavity intersect with an m-n plane. The group-III nitride semiconductor laser device has a laser waveguide extending in a direction of an intersecting line between the m-n plane and the semipolar surface. In a laser structure, a first surface is opposite to a second surface. The first and second fractured faces extend from an edge of the first surface to an edge of the second surface. The fractured faces are not formed by dry etching and are different from conventionally-employed cleaved facets such as c-planes, m-planes, or a-planes.

摘要翻译： 本发明提供一种III族氮化物半导体激光器件，其具有激光腔的高激光产生量，其中六边形III族氮化物的c轴向m轴方向倾斜的支撑基底的半极性表面。 第一和第二断裂面形成激光腔与m-n平面相交。 III族氮化物半导体激光器件具有在m-n平面和半极性表面之间的交线的方向上延伸的激光波导。 在激光结构中，第一表面与第二表面相对。 第一和第二断裂面从第一表面的边缘延伸到第二表面的边缘。 断裂面不是通过干蚀刻形成的，并且与常规使用的切割面不同，例如c面，m面或a平面。

公开(公告)号：US08546163B2

公开(公告)日：2013-10-01

申请号：US13240368

申请日：2011-09-22

申请人： Yusuke Yoshizumi ,  Yohei Enya ,  Takashi Kyono ,  Masahiro Adachi ,  Katsushi Akita ,  Masaki Ueno ,  Takamichi Sumitomo ,  Shinji Tokuyama ,  Koji Katayama ,  Takao Nakamura ,  Takatoshi Ikegami

发明人： Yusuke Yoshizumi ,  Yohei Enya ,  Takashi Kyono ,  Masahiro Adachi ,  Katsushi Akita ,  Masaki Ueno ,  Takamichi Sumitomo ,  Shinji Tokuyama ,  Koji Katayama ,  Takao Nakamura ,  Takatoshi Ikegami

IPC分类号： H01L21/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/028 ,  H01S5/3202 ,  H01S2301/14

摘要： Provided is a group-III nitride semiconductor laser device with a laser cavity allowing for a low threshold current, on a semipolar surface of a support base in which the c-axis of a hexagonal group-III nitride is tilted toward the m-axis. First and second fractured faces 27, 29 to form the laser cavity intersect with an m-n plane. The group-III nitride semiconductor laser device 11 has a laser waveguide extending in a direction of an intersecting line between the m-n plane and the semipolar surface 17a. In a laser structure 13, a first surface 13a is opposite to a second surface 13b. The first and second fractured faces 27, 29 extend from an edge 13c of the first surface to an edge 13d of the second surface 13b. The fractured faces are not formed by dry etching and are different from conventionally-employed cleaved facets such as c-planes, m-planes, or a-planes.

摘要翻译： 提供了在六边形III族氮化物的c轴朝向m轴倾斜的支撑基座的半极性表面上具有允许低阈值电流的激光腔的III族氮化物半导体激光器件。 第一和第二断裂面27,29以形成与m-n平面相交的激光腔。 III族氮化物半导体激光器件11具有在m-n平面和半极性表面17a之间的交线的方向上延伸的激光波导。 在激光结构13中，第一表面13a与第二表面13b相对。 第一和第二断裂面27,29从第一表面的边缘13c延伸到第二表面13b的边缘13d。 断裂面不是通过干蚀刻形成的，并且与常规使用的切割面不同，例如c面，m面或a平面。

公开(公告)号：US08541253B2

公开(公告)日：2013-09-24

申请号：US13416844

申请日：2012-03-09

申请人： Yusuke Yoshizumi ,  Yohei Enya ,  Takashi Kyono ,  Masahiro Adachi ,  Shinji Tokuyama ,  Takamichi Sumitomo ,  Masaki Ueno ,  Takatoshi Ikegami ,  Koji Katayama ,  Takao Nakamura

发明人： Yusuke Yoshizumi ,  Yohei Enya ,  Takashi Kyono ,  Masahiro Adachi ,  Shinji Tokuyama ,  Takamichi Sumitomo ,  Masaki Ueno ,  Takatoshi Ikegami ,  Koji Katayama ,  Takao Nakamura

IPC分类号： H01L21/00

CPC分类号： H01S5/3202 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/028 ,  H01S5/34333

摘要： A method of fabricating a III-nitride semiconductor laser device includes: preparing a substrate with a semipolar primary surface, the semipolar primary surface including a hexagonal III-nitride semiconductor; forming a substrate product having a laser structure, an anode electrode, and a cathode electrode, the laser structure including a substrate and a semiconductor region, and the semiconductor region being formed on the semipolar primary surface; after forming the substrate product, forming first and second end faces; and forming first and second dielectric multilayer films for an optical cavity of the nitride semiconductor laser device on the first and second end faces, respectively.

摘要翻译： 一种制造III族氮化物半导体激光器件的方法包括：制备具有半极性主表面的衬底，所述半极性主表面包括六边形III族氮化物半导体; 形成具有激光结构的衬底产品，阳极电极和阴极电极，所述激光器结构包括衬底和半导体区域，并且所述半导体区域形成在所述半极性主表面上; 在形成基板产品之后，形成第一和第二端面; 以及分别在第一和第二端面上形成用于氮化物半导体激光器件的光腔的第一和第二电介质多层膜。

公开(公告)号：US08420426B2

公开(公告)日：2013-04-16

申请号：US13093246

申请日：2011-04-25

申请人： Hideki Hirayama ,  Katsushi Akita ,  Takao Nakamura

发明人： Hideki Hirayama ,  Katsushi Akita ,  Takao Nakamura

IPC分类号： H01L21/00

CPC分类号： H01L33/0075 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/32

摘要： To provide a light-emitting device using a nitride semiconductor which can attain high-power light emission by highly efficient light emission, a method of manufacturing the light-emitting device involves forming a first AlGaN layer of a first conductivity type on a side of a first main surface of a nitride semiconductor substrate, forming a light-emitting layer including an InAlGaN quaternary alloy on the first AlGaN layer, forming a second AlGaN layer of a second conductivity type on the light-emitting layer, and removing the nitride semiconductor substrate after forming the second AlGaN layer.

摘要翻译： 为了提供使用能够通过高效发光获得高功率发光的氮化物半导体的发光器件，制造发光器件的方法包括在第一导电类型的一侧形成第一导电类型的第一AlGaN层 在氮化物半导体衬底的第一主表面上，在第一AlGaN层上形成包含InAlGaN四元合金的发光层，在发光层上形成第二导电类型的第二AlGaN层，以及在氮化物半导体衬底之后去除氮化物半导体衬底 形成第二AlGaN层。

公开(公告)号：US08227277B2

公开(公告)日：2012-07-24

申请号：US13277806

申请日：2011-10-20

申请人： Yusuke Yoshizumi ,  Yohei Enya ,  Takashi Kyono ,  Masahiro Adachi ,  Katsushi Akita ,  Masaki Ueno ,  Takamichi Sumitomo ,  Shinji Tokuyama ,  Koji Katayama ,  Takao Nakamura ,  Takatoshi Ikegami

发明人： Yusuke Yoshizumi ,  Yohei Enya ,  Takashi Kyono ,  Masahiro Adachi ,  Katsushi Akita ,  Masaki Ueno ,  Takamichi Sumitomo ,  Shinji Tokuyama ,  Koji Katayama ,  Takao Nakamura ,  Takatoshi Ikegami

IPC分类号： H01L21/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02433 ,  H01S5/0014 ,  H01S5/0021 ,  H01S5/0202 ,  H01S5/2009 ,  H01S5/3202 ,  H01S5/3211

摘要： A method of fabricating a group-III nitride semiconductor laser device includes: preparing a substrate of a hexagonal group-III nitride semiconductor, where the substrate has a semipolar primary surface; forming a substrate product having a laser structure, an anode electrode and a cathode electrode, where the laser structure includes the substrate and a semiconductor region, and where the semiconductor region is formed on the semipolar primary surface; scribing a first surface of the substrate product in part in a direction of the a-axis of the hexagonal group-III nitride semiconductor; and carrying out breakup of the substrate product by press against a second surface of the substrate product, to form another substrate product and a laser bar.

摘要翻译： 制备III族氮化物半导体激光器件的方法包括：制备六方晶III族氮化物半导体的衬底，其中衬底具有半极性主表面; 形成具有激光结构的基板产品，阳极电极和阴极电极，其中所述激光器结构包括所述基板和半导体区域，并且所述半导体区域形成在所述半极性主表面上; 在六方晶III族氮化物半导体的a轴的方向上划分基板产品的第一表面; 并且通过压靠衬底产品的第二表面进行衬底产品的分解，以形成另一衬底产品和激光棒。

公开(公告)号：US08208683B2

公开(公告)日：2012-06-26

申请号：US12282062

申请日：2007-03-01

申请人： Susumu Yamamoto ,  Takao Nakamura

发明人： Susumu Yamamoto ,  Takao Nakamura

IPC分类号： G06K9/00

CPC分类号： H04N19/467 ,  H04N21/23892 ,  H04N21/44008 ,  H04N21/4627 ,  H04N21/8358

摘要： A digital watermark embedding apparatus for embedding embedding information, as digital watermark, into an input signal having dimensions equal to or greater than N (N is an integer equal to or greater than 2) and a digital watermark detection apparatus for detecting the digital watermark are disclosed. The digital watermark embedding apparatus generates an embedding sequence based on embedding information, generates a N−1-dimensional pattern based on the embedding sequence, generates N-dimensional embedding pattern by modulating a periodic signal according to a value on the N−1-dimensional pattern, and superimposing the embedding pattern in the input signal and outputs it. The digital watermark detection apparatus measures a component of a predetermined periodic signal in a direction of a dimension of the input signal to obtain a N−1-dimensional pattern, obtains a detection sequence from values of the N−1 dimensional pattern, and detects embedded digital watermark based on a size of correlation value between the detection sequence and an embedding sequence.

摘要翻译： 一种用于将嵌入信息作为数字水印嵌入到尺寸等于或大于N（N是等于或大于2的整数）的输入信号中的数字水印嵌入装置和用于检测数字水印的数字水印检测装置， 披露 数字水印嵌入装置基于嵌入信息生成嵌入序列，根据嵌入序列生成N-1维图案，根据N-1维的值对周期信号进行调制，生成N维嵌入图案 模式，并将嵌入模式叠加在输入信号中并输出。 电子水印检测装置在输入信号的尺寸方向上测量预定周期信号的分量，以获得N-1维图案，从N-1维图案的值获得检测序列，并检测嵌入 基于检测序列和嵌入序列之间的相关值的大小的数字水印。

公开(公告)号：US08207556B2

公开(公告)日：2012-06-26

申请号：US13243516

申请日：2011-09-23

申请人： Takashi Kyono ,  Yusuke Yoshizumi ,  Yohei Enya ,  Katsushi Akita ,  Masaki Ueno ,  Takamichi Sumitomo ,  Takao Nakamura

发明人： Takashi Kyono ,  Yusuke Yoshizumi ,  Yohei Enya ,  Katsushi Akita ,  Masaki Ueno ,  Takamichi Sumitomo ,  Takao Nakamura

IPC分类号： H01L29/24 ,  H01L33/00 ,  H01L29/06 ,  H01L29/12 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L29/22 ,  H01L29/732 ,  H01L29/739

CPC分类号： H01L21/02389 ,  B82Y20/00 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02491 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L33/16 ,  H01L33/32 ,  H01S5/305 ,  H01S5/3086 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/34333 ,  H01S2304/04

摘要： A group III nitride semiconductor device having a gallium nitride based semiconductor film with an excellent surface morphology is provided. A group III nitride optical semiconductor device includes a group III nitride semiconductor supporting base, a GaN based semiconductor region, an active layer, and a GaN semiconductor region. The primary surface of the group III nitride semiconductor supporting base is not any polar plane, and forms a finite angle with a reference plane that is orthogonal to a reference axis extending in the direction of a c-axis of the group III nitride semiconductor. The GaN based semiconductor region, grown on the semipolar primary surface, includes a semiconductor layer of, for example, an n-type GaN based semiconductor doped with silicon. A GaN based semiconductor layer of an oxygen concentration of 5×1016 cm−3 or more provides an active layer, grown on the primary surface, with an excellent crystal quality.

摘要翻译： 提供具有优异表面形态的具有氮化镓基半导体膜的III族氮化物半导体器件。 III族氮化物光半导体器件包括III族氮化物半导体支撑基底，GaN基半导体区域，有源层和GaN半导体区域。 III族氮化物半导体支撑基体的主表面不是任何极性平面，并且与与在III族氮化物半导体的c轴方向上延伸的参考轴正交的参考平面形成有限角度。 在半极性主表面上生长的GaN基半导体区域包括例如掺杂有硅的n型GaN基半导体的半导体层。 氧浓度为5×1016cm-3以上的GaN系半导体层能够提供在主表面生长的活性层，其结晶质量优异。

公开(公告)号：US20120070032A1

公开(公告)日：2012-03-22

申请号：US13301881

申请日：2011-11-22

申请人： Susumu YAMAMOTO ,  Takao Nakamura

发明人： Susumu YAMAMOTO ,  Takao Nakamura

IPC分类号： G06K9/00

CPC分类号： H04N19/467 ,  H04N21/23892 ,  H04N21/44008 ,  H04N21/4627 ,  H04N21/8358

摘要： A digital watermark embedding apparatus for embedding embedding information, as digital watermark, into an input signal having dimensions equal to or greater than N (N is an integer equal to or greater than 2) and a digital watermark detection apparatus for detecting the digital watermark are disclosed. The digital watermark embedding apparatus generates an embedding sequence based on embedding information, generates a N−1-dimensional pattern based on the embedding sequence, generates N-dimensional embedding pattern by modulating a periodic signal according to a value on the N−1-dimensional pattern, and superimposing the embedding pattern in the input signal and outputs it. The digital watermark detection apparatus measures a component of a predetermined periodic signal in a direction of a dimension of the input signal to obtain a N−1-dimensional pattern, obtains a detection sequence from values of the N−1 dimensional pattern, and detects embedded digital watermark based on a size of correlation value between the detection sequence and an embedding sequence.

摘要翻译： 一种用于将嵌入信息作为数字水印嵌入到尺寸等于或大于N（N是等于或大于2的整数）的输入信号中的数字水印嵌入装置和用于检测数字水印的数字水印检测装置， 披露 数字水印嵌入装置基于嵌入信息生成嵌入序列，根据嵌入序列生成N-1维图案，根据N-1维的值对周期信号进行调制，生成N维嵌入图案 模式，并将嵌入模式叠加在输入信号中并输出。 电子水印检测装置在输入信号的尺寸方向上测量预定周期信号的分量，以获得N-1维图案，从N-1维图案的值获得检测序列，并检测嵌入 基于检测序列和嵌入序列之间的相关值的大小的数字水印。

公开(公告)号：US20120061643A1

公开(公告)日：2012-03-15

申请号：US13295840

申请日：2011-11-14

申请人： Yohei Enya ,  Takashi Kyono ,  Takamichi Sumitomo ,  Katsushi Akita ,  Masaki Ueno ,  Takao Nakamura

发明人： Yohei Enya ,  Takashi Kyono ,  Takamichi Sumitomo ,  Katsushi Akita ,  Masaki Ueno ,  Takao Nakamura

IPC分类号： H01L33/04 ,  H01L33/32

CPC分类号： H01L33/16 ,  B82Y20/00 ,  H01L33/32 ,  H01S5/0014 ,  H01S5/2009 ,  H01S5/3202 ,  H01S5/3403 ,  H01S5/34333

摘要： A GaN-based semiconductor light emitting device 11a includes a substrate 13 composed of a GaN-based semiconductor having a primary surface 13a tilting from the c-plane toward the m-axis at a tilt angle α of more than or equal to 63 degrees and less than 80 degrees, a GaN-based semiconductor epitaxial region 15, an active layer 17, an electron blocking layer 27, and a contact layer 29. The active layer 17 is composed of a GaN-based semiconductor containing indium. The substrate 13 has a dislocation density of 1×107 cm−2 or less. In the GaN-based semiconductor light emitting device 11a provided with the active layer containing indium, a decrease in quantum efficiency under high current injection can be moderated.

摘要翻译： GaN基半导体发光器件11a包括由具有从c面朝向m轴倾斜角度大于或等于63度的主表面13a的GaN基半导体构成的衬底13， 低于80度的GaN基半导体外延区域15，有源层17，电子阻挡层27和接触层29.有源层17由包含铟的GaN基半导体构成。 基板13的位错密度为1×10 7 cm -2以下。 在具有含有铟的有源层的GaN系半导体发光元件11a中，能够缓和高电流注入时的量子效率的降低。

公开(公告)号：US08126202B2

公开(公告)日：2012-02-28

申请号：US13105367

申请日：2011-05-11

申请人： Takao Nakamura ,  Susumu Yamamoto ,  Ryo Kitahara ,  Takashi Miyatake ,  Atushi Katayama ,  Hisato Miyachi

发明人： Takao Nakamura ,  Susumu Yamamoto ,  Ryo Kitahara ,  Takashi Miyatake ,  Atushi Katayama ,  Hisato Miyachi

IPC分类号： G06K9/00

CPC分类号： G06T1/0085 ,  G06T2201/0051 ,  H04N21/2541 ,  H04N21/44008 ,  H04N21/835 ,  H04N21/8358

摘要： A digital watermark embedding method of the present invention includes: a step of sequentially obtaining each frame image of the moving image data and frame display time; a step of generating a watermark pattern using watermark information, the frame display time and watermark pattern switching information; a step of superimposing the watermark pattern onto the frame image, and combining watermark embedded frame images obtained by sequentially repeating the processes to generate watermark embedded moving image data. A digital watermark detection method includes a step of sequentially obtaining a frame image; a step of generating a difference image between the currently obtained frame image and a previously obtained frame image; and a step of performing digital watermark detection from the difference image to output digital watermark detection status, and when digital watermark detection process is continued, obtaining a new frame again to repeat the above processes.

摘要翻译： 本发明的数字水印嵌入方法包括：顺序获取运动图像数据的帧图像和帧显示时间的步骤; 使用水印信息生成水印图案的步骤，帧显示时间和水印图案切换信息; 将水印图案叠加在帧图像上的步骤，以及组合通过依次重复所述处理而获得的水印嵌入的帧图像以生成水印嵌入的运动图像数据。 一种数字水印检测方法，包括顺序地获得帧图像的步骤; 在当前获得的帧图像和先前获得的帧图像之间产生差分图像的步骤; 以及从差分图像执行电子水印检测以输出电子水印检测状态的步骤，并且当继续进行电子水印检测处理时，再次获得新的帧以重复上述处理。