发明授权
- 专利标题： Epitaxial wafer for light-emitting diode
- 专利标题（中）： 用于发光二极管的外延晶片
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申请号： US429771申请日： 1995-04-27
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公开(公告)号： US5534717A公开(公告)日： 1996-07-09
- 发明人: Shigetaka Murasato , Koichi Hasegawa
- 申请人： Shigetaka Murasato , Koichi Hasegawa
- 申请人地址： JPX Tokyo
- 专利权人： Showa Denko K.K.
- 当前专利权人： Showa Denko K.K.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX6-217651 19940912; JPX6-309084 19941213
- 主分类号： H01L33/14
- IPC分类号： H01L33/14 ; H01L33/30 ; H01L33/00
摘要：
An epitaxial wafer for a light-emitting diode comprises an n-GaAs single crystal substrate on which a Si-doped n-Ga.sub.1-x Al.sub.x As epitaxial layer, a Si-doped p-Ga.sub.1-y Al.sub.y As active layer, and a p-Ga.sub.1-z Al.sub.z As window layer are epitaxially formed, and in which the window/layer has a Si concentration of below 1.times.10.sup.18 cm.sup.-3.
公开/授权文献
- USD277183S Computer console 公开/授权日：1985-01-15
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