公开(公告)号：US5981976A

公开(公告)日：1999-11-09

申请号：US985199

申请日：1997-12-04

申请人： Shigetaka Murasato

发明人： Shigetaka Murasato

IPC分类号： H01L33/10 ,  H01L33/12 ,  H01L33/14 ,  H01L33/16 ,  H01L33/30 ,  H01L33/46 ,  H01L33/00

CPC分类号： H01L33/30 ,  H01L33/12 ,  H01L33/14 ,  H01L33/10

摘要： An epitaxial wafer for an AlGaInP light-emitting device includes a p-type GaAs substrate, a reflection layer in the form of a laminated body of multiple semiconductor layers provided over the substrate, a double hetero-junction light-emitting structure of AlGaInP formed over the reflection layer, the light-emitting structure including an active layer between upper and lower cladding layers, and a current diffusion layer of AlGaAs provided over the double hetero-junction light-emitting structure. The current diffusion layer is transparent to light emitted by the light-emitting structure. The current diffusion layer is n-type AlGaAs, and has a carrier concentration of from 10.sup.17 cm.sup.-3 to 2.times.10.sup.19 cm.sup.-3, and a thickness that is not more than 1 .mu.m.

摘要翻译： 用于AlGaInP发光器件的外延晶片包括p型GaAs衬底，设置在衬底上的多个半导体层的层叠体形式的反射层，形成在其上的AlGaInP的双异质结发光结构 所述反射层，所述发光结构在上下包层之间包括有源层，以及设置在所述双异质结发光结构上的AlGaAs的电流扩散层。 电流扩散层对于由发光结构发射的光是透明的。 电流扩散层是n型AlGaAs，载流子浓度为1017cm-3至2×1019cm-3，厚度不大于1μm。

公开(公告)号：US5744829A

公开(公告)日：1998-04-28

申请号：US773348

申请日：1996-12-26

申请人： Shigetaka Murasato ,  Yasuyuki Sakaguchi

发明人： Shigetaka Murasato ,  Yasuyuki Sakaguchi

IPC分类号： H01L33/10 ,  H01L33/12 ,  H01L33/14 ,  H01L33/16 ,  H01L33/30 ,  H01L33/00

CPC分类号： H01L33/30 ,  H01L33/10 ,  H01L33/14

摘要： An AlGaInP light-emitting diode includes a double hetero-junction light-emitting structure of (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y P on a GaAs substrate. A multi-film reflection layer is provided between the GaAs substrate and the double hetero-junction light-emitting structure. The layers forming the double hetero-junction are lattice matched with the GaAs substrate at an epitaxial growth temperature. A GaP current diffusion layer is disposed on the upper surface of the double hetero-junction light-emitting structure, and ohmic electrodes are provided on the underside of the GaAs substrate and on the upper surface of the current diffusion layer.

摘要翻译： AlGaInP发光二极管包括在GaAs衬底上的（Al x Ga 1-x）y In 1-y P的双异质结发光结构。 在GaAs衬底和双异质结发光结构之间设置多层反射层。 形成双异质结的层在外延生长温度下与GaAs衬底晶格匹配。 GaP电流扩散层设置在双异质结发光结构的上表面上，欧姆电极设置在GaAs衬底的下侧和电流扩散层的上表面上。

公开(公告)号：US5534717A

公开(公告)日：1996-07-09

申请号：US429771

申请日：1995-04-27

申请人： Shigetaka Murasato ,  Koichi Hasegawa

发明人： Shigetaka Murasato ,  Koichi Hasegawa

IPC分类号： H01L33/14 ,  H01L33/30 ,  H01L33/00

CPC分类号： H01L33/305 ,  H01L33/02

摘要： An epitaxial wafer for a light-emitting diode comprises an n-GaAs single crystal substrate on which a Si-doped n-Ga.sub.1-x Al.sub.x As epitaxial layer, a Si-doped p-Ga.sub.1-y Al.sub.y As active layer, and a p-Ga.sub.1-z Al.sub.z As window layer are epitaxially formed, and in which the window/layer has a Si concentration of below 1.times.10.sup.18 cm.sup.-3.

摘要翻译： 用于发光二极管的外延晶片包括n掺杂的单晶衬底，Si掺杂的n-Ga 1-x Al x As外延层，Si掺杂的p-Ga1-yAlyAs有源层和p-Ga1-zAlzAs 窗口层是外延形成的，其中窗口/层的Si浓度低于1×10 18 cm -3。