Invention Grant
- Patent Title: Method of making wide band gap field emitter
- Patent Title (中): 制造宽带隙场发射器的方法
-
Application No.: US264386Application Date: 1994-06-23
-
Publication No.: US5536193APublication Date: 1996-07-16
- Inventor: Nalin Kumar
- Applicant: Nalin Kumar
- Applicant Address: TX Austin
- Assignee: Microelectronics and Computer Technology Corporation
- Current Assignee: Microelectronics and Computer Technology Corporation
- Current Assignee Address: TX Austin
- Main IPC: H01J1/304
- IPC: H01J1/304 ; H01J9/02
Abstract:
A field emitter comprising an exposed wide band gap emission area in contact with and protruding from a planar surface of a conductive metal, and a method of making is disclosed. Suitable wide band gap materials (2.5-7.0 electron-volts) include diamond, aluminum-nitride and gallium-nitride; suitable conductive metals include titanium, tungsten, gold and graphite. The method includes disposing the wide band gap material on a substrate, disposing the conductive metal on the wide band gap material, and etching the conductive metal to expose wide band gap emission areas. The emission areas are well suited for large area flat panel displays.
Public/Granted literature
- US6056794A Abrasive articles having bonding systems containing abrasive particles Public/Granted day:2000-05-02
Information query