发明授权
- 专利标题： Silicon carbide thyristor
- 专利标题（中）： 碳化硅晶闸管
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申请号： US103866申请日： 1993-08-09
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公开(公告)号： US5539217A公开(公告)日： 1996-07-23
- 发明人: John A. Edmond , John W. Palmour
- 申请人： John A. Edmond , John W. Palmour
- 申请人地址： NC Durham
- 专利权人： Cree Research, Inc.
- 当前专利权人： Cree Research, Inc.
- 当前专利权人地址： NC Durham
- 主分类号： H01L29/744
- IPC分类号： H01L29/744 ; H01L29/24 ; H01L29/74 ; H01L31/0312 ; H01L31/111
摘要：
The SiC thyristor has a substrate, an anode, a drift region, a gate, and a cathode. The substrate, the anode, the drift region, the gate, and the cathode are each preferably formed of silicon carbide. The substrate is formed of silicon carbide having one conductivity type and the anode or the cathode, depending on the embodiment, is formed adjacent the substrate and has the same conductivity type as the substrate. A drift region of silicon carbide is formed adjacent the anode or cathode and has an opposite conductivity type as the anode or cathode. A gate is formed adjacent the drift region or the cathode, also depending on the embodiment, and has an opposite conductivity type as the drift region or the cathode. An anode or cathode, again depending on the embodiment, is formed adjacent the gate or drift region and has an opposite conductivity type than the gate.
公开/授权文献
- USD429981S Corkscrew 公开/授权日：2000-08-29
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