发明授权
US5539228A Field-effect transistor with high breakdown voltage provided by channel
recess offset toward drain
失效
具有高漏电压的场效应晶体管由通道凹槽向漏极偏移提供
- 专利标题： Field-effect transistor with high breakdown voltage provided by channel recess offset toward drain
- 专利标题（中）： 具有高漏电压的场效应晶体管由通道凹槽向漏极偏移提供
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申请号： US385386申请日： 1995-02-07
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公开(公告)号： US5539228A公开(公告)日： 1996-07-23
- 发明人: Tom Y. Chi
- 申请人： Tom Y. Chi
- 申请人地址： CA Los Angeles
- 专利权人： Hughes Aircraft Company
- 当前专利权人： Hughes Aircraft Company
- 当前专利权人地址： CA Los Angeles
- 主分类号： H01L21/285
- IPC分类号： H01L21/285 ; H01L21/338 ; H01L29/812 ; H01L29/80 ; H01L31/112
摘要：
A monolithic-microwave-integrated-circuit (MMIC) metal-semiconductor-field-effect (MESFET) transistor (40) or other type of field-effect transistor has a double-recessed channel region (32,42) with a gate recess (42) formed in a channel recess (32). The channel recess (32) is offset toward the drain (16) as far as possible without shorting the channel recess (32) to the drain (16) to increase the transistor breakdown voltage. The gate recess (42) is offset toward the source (14) as far as possible without causing the gate-source capacitance to increase, thereby reducing the transistor source resistance.
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