发明授权
US5550405A Processing techniques for achieving production-worthy, low dielectric,
low interconnect resistance and high performance ICS
失效
用于实现生产有价值，低电介质，低互连电阻和高性能ICS的加工技术
- 专利标题： Processing techniques for achieving production-worthy, low dielectric, low interconnect resistance and high performance ICS
- 专利标题（中）： 用于实现生产有价值，低电介质，低互连电阻和高性能ICS的加工技术
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申请号： US360856申请日： 1994-12-21
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公开(公告)号： US5550405A公开(公告)日： 1996-08-27
- 发明人: Robin W. Cheung , Mark S. Chang
- 申请人： Robin W. Cheung , Mark S. Chang
- 申请人地址： CA Sunnyvale
- 专利权人： Advanced Micro Devices, Incorporated
- 当前专利权人： Advanced Micro Devices, Incorporated
- 当前专利权人地址： CA Sunnyvale
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/027 ; H01L21/768 ; H01L23/532 ; H01L23/48 ; H01L23/52 ; H01L29/40
摘要：
The interconnects in a semiconductor device contacting metal lines comprise a low resistance metal, such as copper, gold, silver, or platinum, and are separated by a material having a low dielectric constant, such as benzocyclobutene or a derivative thereof. A tri-layer resist structure is used, together with a lift-off process, to form the interconnects. The low dielectric constant material provides a diffusion barrier to the diffusion of the low resistance metal. The tri-layer resist comprises a first layer of a dissolvable polymer, a second layer of a hard mask material, and a third layer of a resist material. The resulting structure provides an integrated circuit with increased speed and ease of fabrication.
公开/授权文献
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