发明授权
US5550409A Semiconductor device having internal wire and method of fabricating the
same
失效
具有内部电线的半导体器件及其制造方法
- 专利标题： Semiconductor device having internal wire and method of fabricating the same
- 专利标题（中）： 具有内部电线的半导体器件及其制造方法
-
申请号： US339662申请日： 1994-11-14
-
公开(公告)号： US5550409A公开(公告)日： 1996-08-27
- 发明人: Takehisa Yamaguchi , Hidekazu Oda
- 申请人： Takehisa Yamaguchi , Hidekazu Oda
- 申请人地址： JPX Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX6-148240 19940629
- 主分类号： H01L21/3205
- IPC分类号： H01L21/3205 ; H01L21/768 ; H01L21/8244 ; H01L23/52 ; H01L23/522 ; H01L23/532 ; H01L27/11 ; H01L23/48 ; H01L29/40
摘要：
In order to obtain a semiconductor device having an internal wire of low resistance, a conductive layer whose surface is silicified is provided in a surface of a semiconductor substrate. A conductor whose surface is silicified is provided on the semiconductor substrate in proximity to the conductive layer. This semiconductor device is provided with an internal wiring layer, which is formed by a titanium film and a titanium silicide layer for electrically connecting the surface of the conductive layer and a surface of an end of the conductor with each other, to cover a side wall surface and a bottom surface of a contact hole.
公开/授权文献
- US4157928A Method for fuel air explosive 公开/授权日：1979-06-12
信息查询
IPC分类:
