发明授权
US5552621A Memory with EEPROM cell having capacitive effect and method for the
reading of such a cell
失效
具有电容效应的EEPROM单元的存储器和用于读取这种单元的方法
- 专利标题： Memory with EEPROM cell having capacitive effect and method for the reading of such a cell
- 专利标题（中）： 具有电容效应的EEPROM单元的存储器和用于读取这种单元的方法
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申请号： US331871申请日： 1994-11-01
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公开(公告)号： US5552621A公开(公告)日： 1996-09-03
- 发明人: Jacek Kowalski
- 申请人： Jacek Kowalski
- 申请人地址： FRX Gemenos
- 专利权人： Gemplus Card International
- 当前专利权人： Gemplus Card International
- 当前专利权人地址： FRX Gemenos
- 优先权： FRX9106466 19910529
- 主分类号： G11C17/00
- IPC分类号： G11C17/00 ; G11C16/02 ; G11C16/04 ; G11C17/04 ; H01L21/8247 ; H01L27/115 ; H01L29/788 ; H01L29/792 ; H01L29/94
摘要：
In a memory cell of an EEPROM or flash-EEPROM memory, the source and the drain of a floating-gate transistor forming the non-volatile memorizing device are connected together. It is shown that the capacitive behavior of the cell is then differentiated at the time of the reading depending on whether it is in a programmed state or in an erased state. This difference in behavior is used to differentiate the logic states.
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