Invention Grant
- Patent Title: Advanced isolation scheme for deep submicron technology
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Application No.: US417572Application Date: 1995-04-06
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Publication No.: US5554562APublication Date: 1996-09-10
- Inventor: Kuang-Yeh Chang , Yowjuang W. Liu , Mark I. Gardner , Frederick N. Hause
- Applicant: Kuang-Yeh Chang , Yowjuang W. Liu , Mark I. Gardner , Frederick N. Hause
- Applicant Address: CA Sunnyvale
- Assignee: Advanced Micro Devices, Inc.
- Current Assignee: Advanced Micro Devices, Inc.
- Current Assignee Address: CA Sunnyvale
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/762
Abstract:
An oxide layer is thermally grown over a semiconductor body, and openings are etched in the oxide layer to expose portions of the surface of the semiconductor body. Then, epitaxial regions are grown from the semiconductor body into the openings in the oxide layer, which epitaxial regions will eventually become the active regions of devices.
Public/Granted literature
- US06136374A Method and apparatus for coating vented brake rotors Public/Granted day:2000-10-24
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