发明授权
- 专利标题: Monolithically integrated mos output-stage component having an excess-temperature protection device
- 专利标题(中): 具有过温保护装置的整体式MOS输出级元件
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申请号: US136627申请日: 1993-10-14
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公开(公告)号: US5555152A公开(公告)日: 1996-09-10
- 发明人: Peter Brauchle , Manfred Uebele
- 申请人: Peter Brauchle , Manfred Uebele
- 申请人地址: DEX Stuttgart
- 专利权人: Robert Bosch GmbH
- 当前专利权人: Robert Bosch GmbH
- 当前专利权人地址: DEX Stuttgart
- 优先权: DEX4236333.0 19921028
- 主分类号: H03F1/52
- IPC分类号: H03F1/52 ; H03K17/08 ; H03K17/082 ; H02H3/00
摘要:
A monolithically integrated MOS output-stage component, particularly a DMOS output stage, includes an output-stage element having a GATE connection, a SOURCE connection, and a DRAIN connection, and also includes an excess-temperature protection device. An integrated GATE-protection resistor is provided. The excess-temperature protection device is also integrated in the output-stage component and includes a series connection of a Zener-diode with a temperature-dependent resistor having a positive temperature coefficient. The resistor is coupled with the SOURCE connection while the Zener-diode is coupled with an outer GATE connection. The series connection is provided with a supply voltage. Furthermore, the excess-temperature protection device contains a semiconductor arrangement controlled by a control voltage at the tap node of the series connection. The semiconductor arrangement reduces the GATE voltage upon the occurrence of excess temperatures. In this way, an evaluation signal having a high total slope with respect to temperature is obtained with only slight requirements for the temperature-dependent resistor. Tank leakage currents are compensated for. The output-stage component is completely integratable in a simple manner and, thus, can be manufactured at favorable cost.
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