发明授权
US5565378A Process of passivating a semiconductor device bonding pad by immersion
in O.sub.2 or O.sub.3 solution
失效
通过浸渍在O 2或O 3溶液中钝化半导体器件接合焊盘的工艺
- 专利标题: Process of passivating a semiconductor device bonding pad by immersion in O.sub.2 or O.sub.3 solution
- 专利标题(中): 通过浸渍在O 2或O 3溶液中钝化半导体器件接合焊盘的工艺
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申请号: US997833申请日: 1992-12-29
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公开(公告)号: US5565378A公开(公告)日: 1996-10-15
- 发明人: Shigeru Harada , Kimio Hagi , Kiyoaki Tsumura
- 申请人: Shigeru Harada , Kimio Hagi , Kiyoaki Tsumura
- 申请人地址: JPX Tokyo
- 专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX4-029506 19920217; JPX4-231846 19920831
- 主分类号: H01L21/321
- IPC分类号: H01L21/321 ; H01L21/60 ; H01L23/485 ; H01L21/228
摘要:
A passive state film is formed on a surface of a bonding pad as follows: A silicon substrate 71 is immersed in solution continuously supplied with ozone. Since ozone is continuously supplied, it is possible to maintain the concentration of the dissolved ozone in the solution above a predetermined concentration. Therefore, it is possible to make the speed of formation of the passive state film higher than the speed of fusion of aluminum, which is a main constituent of the bonding pad. Accordingly, it is possible to form a passive state film with no pinholes.
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