发明授权
- 专利标题: Semiconductor laser
- 专利标题(中): 半导体激光器
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申请号: US509409申请日: 1995-07-31
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公开(公告)号: US5570386A公开(公告)日: 1996-10-29
- 发明人: Federico Capasso , Alfred Y. Cho , Jerome Faist , Albert L. Hutchinson , Carlo Sirtori , Deborah L. Sivco
- 申请人: Federico Capasso , Alfred Y. Cho , Jerome Faist , Albert L. Hutchinson , Carlo Sirtori , Deborah L. Sivco
- 申请人地址: NJ Murray Hill
- 专利权人: Lucent Technologies Inc.
- 当前专利权人: Lucent Technologies Inc.
- 当前专利权人地址: NJ Murray Hill
- 主分类号: H01L33/00
- IPC分类号: H01L33/00 ; H01L21/20 ; H01S3/106 ; H01S5/00 ; H01S5/062 ; H01S5/12 ; H01S5/34 ; H01S5/343 ; H01S3/19
摘要:
The disclosed unipolar quantum cascade (QC) laser comprises a multiplicity of essentially identical active regions, with adjacent active regions separated by a superlattice carrier injection/relaxation region. A given active region contains a single quantum well with at least two electron states. Lasing is obtained without global intersubband population inversion. Instead, there is believed to exist local population inversion in a small region of k-space near k=0, corresponding to electron energies approximately within an optical phonon energy (.about.35 meV) from the bottom of the lower subband. A novel design feature that can be used to improve the thermal characteristics of substantially any QC laser is also disclosed.
公开/授权文献
- US4999248A Amorphous copolymers of perfluoro-2,2-dimethyl-1,3-dioxole 公开/授权日:1991-03-12
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