A multistate PROM and decompressor comprises a PROM array including a plurality of cells arranged to have a plurality of wordlines and a plurality of bitlines, where each cell is configured to have one of a plurality of threshold voltages (Vt0-Vtn). A Vt-detector is coupled to the PROM array and configured to receive a high voltage wordline (WLHV) signal that is ramped from a first voltage (e.g. 0V or ground) to a second voltage (e.g. Vtmax). The Vt-detector is configured to compare the WLHV signal to a plurality of predetermined thresholds and to output a detector word in response to the WLHV signal. An addressed memory cell is selected by a wordline select signal and a bitline select signal. A wordline selector is coupled to the PROM array and configured to receive the WLHV signal. The wordline selector communicates the WLHV signal to a selected wordline in response to the wordline select signal. A bitline selector is coupled to the PROM array and configured to select a selected bitline carrying a bitline signal in response to the bitline select signal. A decompressor is coupled to the Vt-detector and the bitline selector and is configured to receive the detector word and the bitline signal. When the WLHV signal voltage meets the addressed cell's voltage threshold, the addressed memory cell is turned on and the selected bitline signal is activated. Then, the detector word is latched into the decompressor and the data stored in the addressed memory cell is delivered to an output terminal. The first embodiment can be combined with a pump generator. A pump generator delivers a relatively high voltage to the WLHV signal input in order to permit a greater expanse among the operational voltage or current levels. This feature increases the range over which the selectable voltages operate. An advantage of this approach is that there is a greater chance of correct interpretation by the Vt-detector and decompressor.