发明授权
- 专利标题： Low Dielectric constant materials for high speed electronics
- 专利标题（中）： 低介电常数材料用于高速电子
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申请号： US411176申请日： 1995-03-27
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公开(公告)号： US5576517A公开(公告)日： 1996-11-19
- 发明人: Robert J. Wojnarowski , Herbert S. Cole , Theresa A. Sitnik-Nieters , Wolfgang Daum
- 申请人： Robert J. Wojnarowski , Herbert S. Cole , Theresa A. Sitnik-Nieters , Wolfgang Daum
- 申请人地址： NY Schenectady
- 专利权人： General Electric Company
- 当前专利权人： General Electric Company
- 当前专利权人地址： NY Schenectady
- 主分类号： B32B7/02
- IPC分类号： B32B7/02 ; B32B18/00 ; H01L21/48 ; H01L21/60 ; H01L23/498 ; H01L23/538 ; H05K1/02 ; H05K1/03 ; H05K3/00 ; H05K3/38 ; H05K1/18
摘要：
An electronic structure includes a circuit chip having chip pads and supported by a substrate, and a low dielectric constant porous polymer layer having pores and situated over the substrate and circuit chip. The porous polymer layer has at least one via therein aligned with at least one of the chip pads, and a pattern of electrical conductors extends over a portion of the porous polymer layer and into the at least one via. The pattern of electrical conductors does not significantly protrude into the pores of the porous polymer layer.
公开/授权文献
- US4527257A Common memory gate non-volatile transistor memory 公开/授权日：1985-07-02
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