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公开(公告)号：US5554305A
公开(公告)日：1996-09-10
申请号：US411178
申请日：1995-03-27
IPC分类号： B32B7/02 , B32B18/00 , H01L21/48 , H01L21/60 , H01L23/498 , H01L23/538 , H05K1/02 , H05K1/03 , H05K3/00 , H05K3/38 , H01L21/3105
CPC分类号： H05K1/0313 , H01L21/481 , H01L23/49894 , H01L23/5389 , H01L24/24 , H01L24/82 , H05K1/024 , H05K1/0373 , H05K3/0032 , H01L2224/2402 , H01L2224/24227 , H01L2224/32225 , H01L2224/73267 , H01L2224/92244 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01052 , H01L2924/01074 , H01L2924/014 , H01L2924/10329 , H01L2924/12042 , H01L2924/14 , H01L2924/15153 , H01L2924/15165 , H01L2924/3011 , H05K2201/0116 , H05K2201/015 , H05K2201/0158 , H05K2203/083 , H05K2203/122 , H05K3/386 , Y10S521/918 , Y10T29/49124 , Y10T29/49155
摘要： A method for processing a low dielectric constant material includes dispersing an additive material in a porous low dielectric constant layer, fabricating a desired electronic structure, and then removing the additive material from the pores of the low dielectric constant layer. The removal of the additive material from the pores can be accomplished by sublimation, evaporation, and diffusion. Applications for the low dielectric constant layer include the use as an overlay layer for interconnecting a circuit chip supported by a substrate and the use as printed circuit board material.
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公开(公告)号：US5449427A
公开(公告)日：1995-09-12
申请号：US247820
申请日：1994-05-23
IPC分类号： B32B7/02 , B32B18/00 , H01L21/48 , H01L21/60 , H01L23/498 , H01L23/538 , H05K1/02 , H05K1/03 , H05K3/00 , H05K3/38 , B32B31/12 , B32B31/14
CPC分类号： H05K1/0313 , H01L21/481 , H01L23/49894 , H01L23/5389 , H01L24/24 , H01L24/82 , H05K1/024 , H05K1/0373 , H05K3/0032 , H01L2224/2402 , H01L2224/24227 , H01L2224/32225 , H01L2224/73267 , H01L2224/92244 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01052 , H01L2924/01074 , H01L2924/014 , H01L2924/10329 , H01L2924/12042 , H01L2924/14 , H01L2924/15153 , H01L2924/15165 , H01L2924/3011 , H05K2201/0116 , H05K2201/015 , H05K2201/0158 , H05K2203/083 , H05K2203/122 , H05K3/386 , Y10S521/918 , Y10T29/49124 , Y10T29/49155
摘要： A method for processing a low dielectric constant material includes dispersing an additive material in a porous low dielectric constant layer, fabricating a desired electronic structure, and then removing the additive material from the pores of the low dielectric constant layer. The removal of the additive material from the pores can be accomplished by sublimation, evaporation, and diffusion. Applications for the low dielectric constant layer include the use as an overlay layer for interconnecting a circuit chip supported by a substrate and the use as printed circuit board material.
摘要翻译： 用于处理低介电常数材料的方法包括将添加剂材料分散在多孔低介电常数层中，制造所需的电子结构，然后从低介电常数层的孔中除去添加剂材料。 从孔中去除添加剂材料可以通过升华，蒸发和扩散来实现。 用于低介电常数层的应用包括用作互连由衬底支撑的电路芯片和用作印刷电路板材料的覆盖层的用途。
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公开(公告)号：US5576517A
公开(公告)日：1996-11-19
申请号：US411176
申请日：1995-03-27
IPC分类号： B32B7/02 , B32B18/00 , H01L21/48 , H01L21/60 , H01L23/498 , H01L23/538 , H05K1/02 , H05K1/03 , H05K3/00 , H05K3/38 , H05K1/18
CPC分类号： H05K1/0313 , H01L21/481 , H01L23/49894 , H01L23/5389 , H01L24/24 , H01L24/82 , H05K1/024 , H05K1/0373 , H05K3/0032 , H01L2224/2402 , H01L2224/24227 , H01L2224/32225 , H01L2224/73267 , H01L2224/92244 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01052 , H01L2924/01074 , H01L2924/014 , H01L2924/10329 , H01L2924/12042 , H01L2924/14 , H01L2924/15153 , H01L2924/15165 , H01L2924/3011 , H05K2201/0116 , H05K2201/015 , H05K2201/0158 , H05K2203/083 , H05K2203/122 , H05K3/386 , Y10S521/918 , Y10T29/49124 , Y10T29/49155
摘要： An electronic structure includes a circuit chip having chip pads and supported by a substrate, and a low dielectric constant porous polymer layer having pores and situated over the substrate and circuit chip. The porous polymer layer has at least one via therein aligned with at least one of the chip pads, and a pattern of electrical conductors extends over a portion of the porous polymer layer and into the at least one via. The pattern of electrical conductors does not significantly protrude into the pores of the porous polymer layer.
摘要翻译： 电子结构包括具有芯片焊盘并由衬底支撑的电路芯片，以及具有孔并位于衬底和电路芯片上的低介电常数多孔聚合物层。 多孔聚合物层具有与至少一个芯片焊盘对准的至少一个通孔，并且电导体图案在多孔聚合物层的一部分上延伸到至少一个通孔中。 电导体的图案不会显着地突出到多孔聚合物层的孔中。
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4.发明授权
公开(公告)号：US5434751A
公开(公告)日：1995-07-18
申请号：US225876
申请日：1994-04-11
IPC分类号： H01L21/48 , H01L23/538 , H05K1/00 , H05K1/11
CPC分类号： H01L24/82 , H01L21/485 , H01L23/5389 , H01L24/19 , H01L24/24 , H01L2224/04105 , H01L2224/2402 , H01L2224/24227 , H01L2224/32225 , H01L2224/73267 , H01L24/73 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01018 , H01L2924/01027 , H01L2924/01029 , H01L2924/01039 , H01L2924/01074 , H01L2924/01075 , H01L2924/01082 , H01L2924/10253 , H01L2924/10329 , H01L2924/12042 , H01L2924/14 , H01L2924/15153 , H01L2924/15165 , H01L2924/15787 , H05K1/0286 , H05K3/4676 , Y10T29/49155
摘要： A multichip module (incorporating a high density interconnect structure) has: a first portion containing a substrate with semiconductor chips therein, with each chip having contact pads; a second portion comprising a (HDI) structure interconnecting the chip pads; and a solvent-soluble release layer bonding the two portions together and allowing for easy removal of the HDI structure from the substrate of the module by immersion in an appropriate solvent for the release layer.
摘要翻译： 多芯片模块（包括高密度互连结构）具有：包含其中具有半导体芯片的衬底的第一部分，每个芯片具有接触焊盘; 第二部分包括互连芯片焊盘的（HDI）结构; 以及将两部分结合在一起的溶剂可溶性剥离层，并且通过浸渍在用于剥离层的合适溶剂中，可以容易地从模块的基材上除去HDI结构。
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公开(公告)号：US5353498A
公开(公告)日：1994-10-11
申请号：US87434
申请日：1993-07-09
申请人： Raymond A. Fillion , Robert J. Wojnarowski , Michael Gdula , Herbert S. Cole , Eric J. Wildi , Wolfgang Daum
发明人： Raymond A. Fillion , Robert J. Wojnarowski , Michael Gdula , Herbert S. Cole , Eric J. Wildi , Wolfgang Daum
IPC分类号： H01L23/52 , H01L21/56 , H01L21/58 , H01L21/68 , H01L23/29 , H01L23/433 , H01L23/538 , H01L25/04 , H01L25/065 , H01L25/18 , H05K3/34
CPC分类号： H01L21/568 , H01L21/6835 , H01L23/293 , H01L23/295 , H01L23/4334 , H01L23/538 , H01L23/5389 , H01L24/24 , H01L24/29 , H01L24/82 , H01L24/83 , H01L24/96 , H01L25/0652 , H01L25/0657 , H01L25/105 , H01L2224/04105 , H01L2224/2402 , H01L2224/24137 , H01L2224/24195 , H01L2224/2518 , H01L2224/2919 , H01L2224/82039 , H01L2224/83192 , H01L2224/8385 , H01L2225/06517 , H01L2225/0652 , H01L2225/06524 , H01L2225/06541 , H01L2225/06551 , H01L2225/06589 , H01L2225/1035 , H01L2225/1058 , H01L2225/1064 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01027 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01039 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/0132 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/12042 , H01L2924/14 , H01L2924/18162 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , Y10T29/49144
摘要： Substrate material is molded directly to semiconductor chips and other electrical components that are positioned for integrated circuit module fabrication. Chips having contact pads are placed face down on a layer of adhesive supported by a base. A mold form is positioned around the chips. Substrate molding material is added within the mold form, and the substrate molding material is then hardened. A dielectric layer having vias aligned with predetermined ones of the contact pads and having an electrical conductor extending through the vias is situated on the hardened substrate molding material and the faces of the chips. A thermal plug may be affixed to the backside of a chip before substrate molding material is added. A connector frame may be placed on the adhesive layer before substrate molding material is added. A dielectric layer may be placed over the backsides of the chips before the substrate molding material is added to enhance repairability. A portion of the chips and substrate molding material may be removed after the substrate molding material is hardened.
摘要翻译： 基板材料直接模制到半导体芯片和其他用于集成电路模块制造的电气部件。 具有接触垫的芯片面朝下放置在由基底支撑的粘合剂层上。 模具周围位于芯片周围。 在模具形式中加入基材成型材料，然后将基材成型材料硬化。 具有与预定接触焊盘对准的通孔并具有延伸通过通孔的电导体的通孔的电介质层位于硬化的基底成型材料和芯片的表面上。 在添加基板模制材料之前，可以将热塞固定到芯片的背面。 在添加基材模塑材料之前，连接器框架可以放置在粘合剂层上。 在添加基底成型材料之前，可以将电介质层放置在芯片的背面上以增强可修复性。 芯片和基材成型材料的一部分可以在基材模塑材料硬化之后被去除。
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6.发明授权Mutliple lamination high density interconnect process and structure employing thermoplastic adhesives having sequentially decreasing T.sub.G ' s 失效MUTLIPLE LAMINATION高密度互连过程和结构使用具有顺序降低的热塑性粘合剂
公开(公告)号：US5157589A
公开(公告)日：1992-10-20
申请号：US546963
申请日：1990-07-02
IPC分类号： H01L23/13 , H01L23/498 , H01L23/538 , H01L25/04 , H01L25/18 , H05K1/18 , H05K3/38 , H05K3/46
CPC分类号： H01L23/5389 , H01L23/13 , H01L23/49822 , H01L24/24 , H01L24/82 , H05K3/4635 , H05K3/4673 , H01L2224/2402 , H01L2224/24227 , H01L2224/73267 , H01L2224/82039 , H01L2224/92244 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01039 , H01L2924/01074 , H01L2924/01082 , H01L2924/04953 , H01L2924/12042 , H01L2924/14 , H01L2924/15153 , H01L2924/15165 , H01L2924/15787 , H05K1/185 , H05K2201/0129 , H05K2201/0154 , H05K2201/0195 , H05K3/386 , H05K3/4644
摘要： A high density interconnect structure incorporating a plurality of laminated dieletric layers is fabricated using thermoplastic adhesive layers of progressively lower glass transition temperature in order to maintain the stability of the already fabricated structure during the addition of the later laminations. This structure also facilitates the removal of only a portion of the high density interconnect structure where a fault in the system can be corrected in one of the upper layers of the high density interconnect structure.
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公开(公告)号：US5562838A
公开(公告)日：1996-10-08
申请号：US037833
申请日：1993-03-29
CPC分类号： B29D11/00701 , G02B6/1221 , G02B6/13 , G02B6/421 , G02B6/43 , G02B2006/12173 , G02B2006/12176
摘要： HDI fabrication techniques are employed to form a variety of optical waveguide structures in polymer materials. Adaptive optical connections are formed, taking into account the actual position and orientation of devices which may deviate from the ideal. Structures include solid light-conducting structures, hollow light-conducting structures which are also suitable for conducting cooling fluid, and optical switching devices employing liquid crystal material. A "shrink back" method may be used to form a tunnel in polymer material which is then filled with an uncured polymer material that shrinks upon curing.
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公开(公告)号：US5169678A
公开(公告)日：1992-12-08
申请号：US456421
申请日：1989-12-26
IPC分类号： C08K5/00 , B23K26/00 , B23K26/18 , B23K26/40 , C08J7/00 , C08J7/04 , C08K5/22 , C08L101/00 , C09D201/00 , G03F7/039 , G03F7/20 , H01L21/027 , H01L21/30 , H01L21/311 , H01L23/12 , H01L23/538 , H01L25/04 , H01L25/18
CPC分类号： G03F7/039 , G03F7/2053 , H01L21/31127 , H01L23/5389 , H01L24/24 , H01L24/82 , H01L2224/24227 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01023 , H01L2924/01033 , H01L2924/01074 , H01L2924/12042 , H01L2924/14 , Y10S430/146
摘要： The ultraviolet absorption characteristics of a polymer material are modified by the addition of an ultraviolet absorbing dye to render it laser ablatable at a frequency at which the unmodified material is substantially non-laser ablatable.
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9.发明授权Fabrication and structures of circuit modules with flexible interconnect layers 失效具有柔性互连层的电路模块的制造和结构
公开(公告)号：US5527741A
公开(公告)日：1996-06-18
申请号：US321346
申请日：1994-10-11
申请人： Herbert S. Cole , Raymond A. Fillion , Bernard Gorowitz , Ronald F. Kolc , Robert J. Wojnarowski
发明人： Herbert S. Cole , Raymond A. Fillion , Bernard Gorowitz , Ronald F. Kolc , Robert J. Wojnarowski
IPC分类号： H01L21/60 , H01L21/48 , H01L23/538 , H05K3/32
CPC分类号： H05K3/32 , H01L21/4857 , H01L23/5383 , H01L23/5387 , H01L24/24 , H01L24/82 , H01L2224/04105 , H01L2224/24137 , H01L2224/32225 , H01L2224/73267 , H01L2224/82047 , H01L2224/92144 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01018 , H01L2924/01025 , H01L2924/01027 , H01L2924/01029 , H01L2924/01078 , H01L2924/014 , H01L2924/12042 , H01L2924/14 , H01L2924/15153 , Y10T29/4913
摘要： A method for fabricating a circuit module includes applying an outer insulative layer over a first patterned metallization layer on a first surface of a base insulative layer. A second surface of the base insulative layer has a second patterned metallization layer. At least one circuit chip having chip pads is attached to the second surface of the base insulative layer. Respective vias are formed to expose selected portions of the first patterned metallization layer, the second patterned metallization layer, and the chip pads. A patterned outer metallization layer is applied over the outer insulative layer to extend through selected ones of the vias to interconnect selected ones of the chip pads and selected portions of the first and second metallization layers.
摘要翻译： 一种用于制造电路模块的方法包括在绝缘层的第一表面上的第一图案化金属化层上施加外部绝缘层。 基极绝缘层的第二表面具有第二图案化金属化层。 具有芯片焊盘的至少一个电路芯片附接到基极绝缘层的第二表面。 形成各个通孔以暴露第一图案化金属化层，第二图案化金属化层和芯片焊盘的选定部分。 图案化的外部金属化层被施加在外部绝缘层上以延伸通过选定的通孔以互连所选择的芯片焊盘和第一和第二金属化层的选定部分。
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10.发明授权Optical light pipe and microwave waveguide interconnects in multichip modules formed using adaptive lithography 失效在使用自适应光刻形成的多芯片模块中的光学光管和微波波导互连
公开(公告)号：US5525190A
公开(公告)日：1996-06-11
申请号：US408231
申请日：1995-03-22
IPC分类号： B29D11/00 , G02B6/12 , G02B6/122 , G02B6/13 , G02B6/36 , G02B6/42 , G02B6/43 , B44C1/22 , B29C37/00 , C23F1/02
CPC分类号： B29D11/00701 , G02B6/1221 , G02B6/13 , G02B6/421 , G02B6/43 , G02B2006/12173 , G02B2006/12176
摘要： HDI fabrication techniques are employed to form a variety of optical waveguide structures in polymer materials. Adaptive optical connections are formed, taking into account the actual position and orientation of devices which may deviate from the ideal. Structures include solid light-conducting structures, hollow light-conducting structures which are also suitable for conducting cooling fluid, and optical switching devices employing liquid crystal material. A "shrink back" method may be used to form a tunnel in polymer material which is then filled with an uncured polymer material that shrinks upon curing.
摘要翻译： 采用HDI制造技术在聚合物材料中形成各种光波导结构。 考虑到可能偏离理想的装置的实际位置和取向，形成自适应光学连接。 结构包括固体导光结构，也适于导电冷却流体的中空导光结构，以及采用液晶材料的光学开关器件。 可以使用“缩回”方法在聚合物材料中形成隧道，然后填充固化时收缩的未固化的聚合物材料。
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