发明授权
- 专利标题： Double poly high density buried bit line mask ROM
- 专利标题（中）： 双聚高密度掩埋位线掩模ROM
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申请号： US349432申请日： 1994-12-05
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公开(公告)号： US5578857A公开(公告)日： 1996-11-26
- 发明人: Gary Hong , Ming-Tzong Yang , Chen-Chiu Hsue
- 申请人： Gary Hong , Ming-Tzong Yang , Chen-Chiu Hsue
- 申请人地址： TWX Hsin-chu
- 专利权人： United Microelectronics Corporation
- 当前专利权人： United Microelectronics Corporation
- 当前专利权人地址： TWX Hsin-chu
- 主分类号： H01L21/8246
- IPC分类号： H01L21/8246 ; H01L29/76
摘要：
In accordance with the invention, a double poly process is used to double the memory density of a buried bit line ROM on the same silicon area. In particular the word-line pitch is decreased to increase the cell density in a direction perpendicular to the word lines. The invention uses a self-aligned method for ROM code implantation and a polyplanarization by chemical-mechanical polishing (CMP) to achieve a self aligned double poly word line structure.
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