发明授权
- 专利标题： Method for manufacturing a semiconductor photo-sensor
- 专利标题（中）： 半导体光电传感器的制造方法
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申请号： US472110申请日： 1995-06-07
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公开(公告)号： US5583076A公开(公告)日： 1996-12-10
- 发明人: Tetsuo Yoshizawa , Akio Mihara , Hiromichi Yamashita , Ichiro Ohnuki , Yasuo Suda , Keiji Ohtaka , Toshiaki Sato , Taichi Sugimoto
- 申请人： Tetsuo Yoshizawa , Akio Mihara , Hiromichi Yamashita , Ichiro Ohnuki , Yasuo Suda , Keiji Ohtaka , Toshiaki Sato , Taichi Sugimoto
- 申请人地址： JPX Tokyo
- 专利权人： Canon Kabushiki Kaisha
- 当前专利权人： Canon Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX61-166895 19860716; JPX61-166896 19860716; JPX62-6899 19870114
- 主分类号： H01L31/0203
- IPC分类号： H01L31/0203 ; H01L31/0232 ; H01L21/60
摘要：
In a method for manufacturing a semiconductor photo-sensor, an assembly including a photoelectric conversion element having a photoreceiving section, and a lead terminal having an inner lead connected to the photoelectric conversion element by a bonding wire is provided. A light transmitting member is also provided within the cavity spaced apart from the photoelectric conversion element and at a light-incident side of the photoelectric conversion element, the light transmitting member having an inner surface facing an upper surface of the photoelectric conversion element and an outer surface opposite the inner surface. The photoelectric conversion element, the inner lead and the bonding wire are sealed by introducing a light transmitting resin into the cavity so as to provide a relation l
公开/授权文献
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