发明授权
- 专利标题： Magnetorsistance effect element
- 专利标题（中）： 磁阻效应元素
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申请号： US326731申请日： 1994-10-20
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公开(公告)号： US5585198A公开(公告)日： 1996-12-17
- 发明人: Atsushi Maeda , Satoru Oikawa , Minoru Kume
- 申请人： Atsushi Maeda , Satoru Oikawa , Minoru Kume
- 申请人地址： JPX Osaka
- 专利权人： Sanyo Electric Co., Ltd.
- 当前专利权人： Sanyo Electric Co., Ltd.
- 当前专利权人地址： JPX Osaka
- 优先权： JPX5-262547 19931020; JPX7-054163 19940324
- 主分类号： G01R33/09
- IPC分类号： G01R33/09 ; G11B5/39 ; H01F10/00 ; H01L43/10 ; B32B3/10 ; B32B15/00 ; G11B21/00
摘要：
A magnetoresistance effect element includes a non-magnetic substrate, a ferromagnetic dispersion layer or a ferromagnetic layer, and a non-magnetic metal film. The ferromagnetic dispersion layer is a layer of a ferromagnetic metal or alloy that is independently and dispersedly formed on the substrate. The alternative ferromagnetic layer is a layer of a ferromagnetic metal or alloy that is formed on the substrate with a textured surface. The non-magnetic metal film is made of at least one atomic element having a non-soluble relation with the ferromagnetic metal or alloy, and is formed on the non-magnetic substrate and the ferromagnetic dispersion layer or the ferromagnetic layer.
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