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15 条记录 (耗时 0.019 秒)

    Magnetoresistive device
    1.
    发明授权
    Magnetoresistive device 失效
    磁阻器件

    公开(公告)号：US5818323A

    公开(公告)日：1998-10-06

    申请号：US524751

    申请日：1995-09-07

    申请人： Atsushi Maeda ,  Satoru Oikawa ,  Toshio Tanuma ,  Minoru Kume ,  Kazuhiko Kuroki

    发明人： Atsushi Maeda ,  Satoru Oikawa ,  Toshio Tanuma ,  Minoru Kume ,  Kazuhiko Kuroki

    IPC分类号： G11B5/39 ,  H01F10/32 ,  H01L43/10 ,  H01L43/00

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  H01F10/3227 ,  H01L43/10 ,  G11B5/3903 ,  Y10T428/12014

    摘要： A magnetoresistive device has an alloy film, including a ferromagnetic substance and a non-magnetic substance which is not soluble in solid phase in the ferromagnetic substance or is in a eutectic relation with the ferromagentic substance. The ferromagnetic substance forms grains in the non-magnetic substance, and the grains preferably have anisotropic shapes. The non-magnetic substance is conducting. The alloy film is composed of a plurality of alloy film stripes. Alternatively the magneto-resistive device includes a non-magnetic layer arranged between first and second magnetic layers, wherein the non-magnetic layer has 10 to 50 weight percent of grains of a magnetic substance dispersed therein.

    摘要翻译： 磁阻器件具有合金膜，其包括铁磁物质和在铁磁物质中不溶于固相的非磁性物质，或与铁质物质呈共晶关系。 铁磁物质在非磁性物质中形成晶粒，并且晶粒优选具有各向异性形状。 非磁性物质是导电的。 合金膜由多个合金膜条纹构成。 或者，磁阻装置包括布置在第一和第二磁性层之间的非磁性层，其中非磁性层具有分散在其中的磁性物质的10至50重量％的颗粒。

    Magnetoresistive element
    5.
    发明授权
    Magnetoresistive element 失效
    磁阻元件

    公开(公告)号：US5736921A

    公开(公告)日：1998-04-07

    申请号：US406670

    申请日：1995-03-20

    申请人： Atsushi Maeda ,  Satoru Oikawa ,  Minoru Kume

    发明人： Atsushi Maeda ,  Satoru Oikawa ,  Minoru Kume

    IPC分类号： G01R33/09 ,  G11B5/39 ,  H01F10/00 ,  H01F10/32 ,  H01L43/10 ,  H01L43/00

    CPC分类号： B82Y25/00 ,  G01R33/09 ,  H01F10/007 ,  H01F10/3227 ,  H01L43/10 ,  G11B5/3903

    摘要： A magnetoresistive element includes a substrate, a magnetoresistive film arranged on the substrate and prepared from a non-magnetic conductive metal film containing grains consisting of a ferromagnetic metal atom or a ferromagnetic metal alloy dispersed therein so that the grain concentration is varied along the film thickness direction, a pair of current feeding electrodes arranged on the magnetoresistive film, and a pair of voltage reading electrodes arranged on the magnetoresistive film.

    摘要翻译： 磁阻元件包括基板，磁阻膜，其布置在基板上，并由含有由铁磁性金属原子或强磁性金属合金构成的晶粒的非磁性导电金属膜制备，使得晶粒浓度沿膜厚度变化 方向，布置在磁阻膜上的一对电流馈电电极和布置在磁阻膜上的一对电压读取电极。

    Magnetoresistive device and method of preparing the same
    7.
    发明授权
    Magnetoresistive device and method of preparing the same 失效
    磁阻装置及其制备方法

    公开(公告)号：US5680091A

    公开(公告)日：1997-10-21

    申请号：US524746

    申请日：1995-09-07

    申请人： Atsushi Maeda ,  Toshio Tanuma ,  Minoru Kume ,  Kazuhiko Kuroki

    发明人： Atsushi Maeda ,  Toshio Tanuma ,  Minoru Kume ,  Kazuhiko Kuroki

    IPC分类号： G01R33/09 ,  G11B5/39 ,  H01F10/08 ,  H01F10/32 ,  H01L43/08 ,  H01L43/00

    CPC分类号： B82Y25/00 ,  H01F10/324 ,  H01L43/08

    摘要： A magnetoresistive device includes a substrate and a magnetic film which is formed by alternately stacking magnetic and non-magnetic layers with each other on the substrate. The substrate is prepared to have a texture on its surface, and the magnetic film is formed on this substrate so that a texture is formed along the interface between the magnetic and non-magnetic layers. The texture can be an atomic level texture with step features dimensioned dependent upon the lattice constant, or may be an etched texture of features having desired dimensions in a specified range.

    摘要翻译： 磁阻装置包括基板和通过在基板上彼此交替堆叠磁性和非磁性层而形成的磁性膜。 准备基板在其表面上具有纹理，并且在该基板上形成磁性膜，使得沿着磁性层和非磁性层之间的界面形成纹理。 纹理可以是具有取决于晶格常数的步长特征的原子级结构，或者可以是具有在指定范围内具有期望尺寸的特征的蚀刻纹理。

    Magnetoresistance-effect element
    8.
    发明授权
    Magnetoresistance-effect element 失效
    磁阻效应元件

    公开(公告)号：US5656381A

    公开(公告)日：1997-08-12

    申请号：US216185

    申请日：1994-03-22

    申请人： Atsushi Maeda ,  Minoru Kume

    发明人： Atsushi Maeda ,  Minoru Kume

    IPC分类号： G11B5/39 ,  H01F10/00 ,  H01F10/32 ,  H01L43/10 ,  H01F1/00

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  H01F10/007 ,  H01F10/3227 ,  H01L43/10 ,  G11B2005/3996 ,  Y10T428/1171 ,  Y10T428/12028 ,  Y10T428/12465 ,  Y10T428/12986

    摘要： A magnetoresistance-effect element includes a substrate, and a magnetoresistance-effect film disposed on the substrate. The magnetoresistance-effect film includes an alloy film containing ferromagnetic metal atoms and non-magnetic metal atoms, which have the property relative to each other that they are mutually insoluble in both solid and liquid phases. The magnetoresistance-effect film further includes at least three soft magnetic films arranged as discontinuous areas in contact with the alloy film and magnetically coupled therewith for reducing an operating magnetic field strength of the element.

    摘要翻译： 磁阻效应元件包括衬底和设置在衬底上的磁阻效应膜。 磁阻效应膜包括含有强磁性金属原子和非磁性金属原子的合金膜，它们彼此具有在固相和液相中彼此不溶的特性。 磁阻效应膜还包括至少三个软磁膜，其被布置为与合金膜接触的不连续区域并与其磁耦合，用于降低元件的操作磁场强度。

    Method for making magnetic recording media
    9.
    发明授权
    Method for making magnetic recording media 失效
    制作磁记录介质的方法

    公开(公告)号：US4767516A

    公开(公告)日：1988-08-30

    申请号：US864357

    申请日：1986-05-19

    申请人： Yoshio Nakatsuka ,  Minoru Kume ,  Daisuke Kishimoto

    发明人： Yoshio Nakatsuka ,  Minoru Kume ,  Daisuke Kishimoto

    IPC分类号： G11B5/851 ,  C23C14/36

    CPC分类号： G11B5/851

    摘要： A magnetic recording tape making process and apparatus is disclosed. The apparatus includes a first depositing station which utilizes a the sputtering process for depositing a seed layer on a substrate with an initial incident angle of about 5.degree., and a second depositing station for depositing, over the seed layer, an extended layer with an initial incident angle of about 45.degree.. The seed layer has a thickness of about 0.01 micrometer, and is defined by young crystalline columns of magnetic material densely and perpendicularly formed on the substrate. The extended layer is defined by extended crystalline columns over the young crystalline columns through self-epitaxial growth. The completed magnetic film defined by the two layers has a high residual magnetization ratio MV/MH and also a high perpendicular coercivity Hcv.

    摘要翻译： 公开了一种磁记录带制造工艺和装置。 该装置包括第一沉积站，其利用溅射工艺在基板上沉积约5°的初始入射角;以及第二沉积站，用于在种子层上沉积具有初始 入射角约45°。 种子层具有约0.01微米的厚度，并且由基底上密集且垂直形成的磁性材料的年轻晶体层限定。 扩展层由延伸的结晶柱通过自外延生长在年轻的结晶柱上限定。 由两层限定的完成的磁性膜具有高残留磁化比MV / MH，并且还具有高垂直矫顽力Hcv。

    Magnetoresistive film
    10.
    发明授权
    Magnetoresistive film 失效
    磁阻膜

    公开(公告)号：US5620784A

    公开(公告)日：1997-04-15

    申请号：US511012

    申请日：1995-08-03

    申请人： Toshio Tanuma ,  Minoru Kume

    发明人： Toshio Tanuma ,  Minoru Kume

    IPC分类号： C23C14/14 ,  G01R33/09 ,  G11B5/39 ,  H01F10/08 ,  H01F10/18 ,  H01F10/26 ,  H01F10/32 ,  H01L43/02 ,  H01L43/08 ,  H01F10/14

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  H01F10/324 ,  H01F10/3281 ,  H01L43/08 ,  G11B2005/3996 ,  H01F10/3295 ,  Y10S428/90 ,  Y10T428/1121 ,  Y10T428/12465 ,  Y10T428/1291 ,  Y10T428/12917 ,  Y10T428/24942 ,  Y10T428/24975

    摘要： A magnetoresistive film includes, arranged in the following order, a substrate, a first ferromagnetic layer, a non-magnetic metal film, and a second ferromagnetic layer which has a coercive force different from that of the first ferromagnetic layer. The magnetoresistive film has an uneven number of inflection point(s) in its magnetization hysteresis curve in the process of magnetization transition from a first saturation magnetization state to a second saturation magnetization state, with a magnetic field change quantity Hb and a magnetic field change quantity Ha being in the following relation:Ha/Hb.ltoreq.1where Ha and Hb are respectively expressed as Ha=.vertline.H.sub.2 -H.sub.0 .vertline. and Hb=.vertline.H.sub.1 -H.sub.0 .vertline., with H.sub.0, H.sub.1 and H.sub.2 respectively representing the magnetic field at the intermediate inflection point, the magnetic field corresponding to 95% of said first saturation magnetization, and the magnetic field corresponding to 95% of said second saturation magnetization after transition.

    摘要翻译： 磁阻膜包括按照以下顺序布置基板，第一铁磁层，非磁性金属膜和具有与第一铁磁层不同的矫顽力的第二铁磁层。 磁阻膜在从第一饱和磁化状态到第二饱和磁化状态的磁化转变过程中的磁化滞后曲线中具有不均匀的拐点数，磁场变化量Hb和磁场变化量 Ha的关系如下：Ha / Hb其中Ha和Hb分别表示为Ha = | H2-H0 | 和Hb = | H1-H0 |，其中H0，H1和H2分别表示中间拐点处的磁场，对应于所述第一饱和磁化强度的95％的磁场，对应于所述第二饱和磁化强度的95％的磁场 过渡后的饱和磁化强度。