发明授权
US5585210A Mask pattern of a semiconductor device and a method of manufacturing
fine patterns using the same
失效
半导体器件的掩模图案和使用其制造精细图案的方法
- 专利标题： Mask pattern of a semiconductor device and a method of manufacturing fine patterns using the same
- 专利标题（中）： 半导体器件的掩模图案和使用其制造精细图案的方法
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申请号： US536122申请日： 1995-09-29
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公开(公告)号： US5585210A公开(公告)日： 1996-12-17
- 发明人: Dong-Seon Lee , Chang-Jin Sohn , Woo-Sung Han , Gee-Hoo Kim
- 申请人： Dong-Seon Lee , Chang-Jin Sohn , Woo-Sung Han , Gee-Hoo Kim
- 申请人地址： KRX Suwon
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KRX Suwon
- 优先权： KRX93-6805 19930422; KRX93-13345 19930715
- 主分类号： G03F1/70
- IPC分类号： G03F1/70 ; G03F7/20 ; H01L21/027 ; G03F9/00
摘要：
A mask pattern for manufacturing a resist pattern of a semiconductor device through photolithography is provided with an additional mask pattern whose size is such that resist patterns are not formed after exposure on the spaces thereof. Using such a mask pattern, a manufacturing method of fine patterns enables the formation of specific patterns having an improved profile.
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