发明授权
- 专利标题: Magnetron sputtering source for low pressure operation
- 专利标题(中): 用于低压操作的磁控溅射源
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申请号: US396366申请日: 1995-02-28
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公开(公告)号: US5593551A公开(公告)日: 1997-01-14
- 发明人: Kwok F. Lai
- 申请人: Kwok F. Lai
- 申请人地址: CA Palo Alto
- 专利权人: Varian Associates, Inc.
- 当前专利权人: Varian Associates, Inc.
- 当前专利权人地址: CA Palo Alto
- 主分类号: C23C14/35
- IPC分类号: C23C14/35 ; H01J37/34 ; H01L21/203 ; C23C14/34
摘要:
A magnetron sputtering source which is capable of very low pressure operation is disclosed. The source comprises a dish-shaped sputter target behind which is mounted a primary magnet for confining a plasma discharge adjacent to the front surface of the sputter target. A bucking magnet, positioned adjacent to the perimeter of the sputter target and, preferably, at the same level as the target, is used to prevent the magnetic field created by the primary magnet from spreading out at near the edge of the sputter target. This enables the source to operate at very low pressure and reduces the impedance of the discharge.
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