发明授权
- 专利标题： Etching recipe for the CrSi film
- 专利标题（中）： 刻蚀CrSi薄膜配方
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申请号： US456918申请日： 1995-06-01
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公开(公告)号： US5593601A公开(公告)日： 1997-01-14
- 发明人: Hsien-Fen Hsieh , Ming-Teh Hsu
- 申请人： Hsien-Fen Hsieh , Ming-Teh Hsu
- 申请人地址： TWX Hsinchu
- 专利权人： Industrial Technology Research Institute
- 当前专利权人： Industrial Technology Research Institute
- 当前专利权人地址： TWX Hsinchu
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; B44C1/22 ; C23C1/00
摘要：
An etchant recipe suitable for the photo-etching process of the CrSi metalized film in the patterning of electronic circuitry. The etchant comprises 100 to 120 parts of 36.5 to 38% HCl, 1.0 to 2.0 parts of 48.8 to 49.2% HF, 0 to 10 parts of 30.0 to 32.0% H.sub.2 O.sub.2 and 50 to 100 parts of 85 to 87% H.sub.3 PO.sub.4. A 0.1 g/100 cc wetting agent is optionally added.
公开/授权文献
- US4967309A Dual current sensing driver circuit 公开/授权日：1990-10-30
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