Wet etching
    1.
    发明授权
    Wet etching 失效
    湿式蚀刻

    公开(公告)号:US5989442A

    公开(公告)日:1999-11-23

    申请号:US783305

    申请日:1997-01-10

    CPC分类号: H01L21/707 G01L1/2287

    摘要: Method for wet etching where proper arrangements of the substrates during the growth of the insulation layer is adopted. An insulation layer is prepared on the surface of a substrate at the area where thin film circuits are positioned. On the surfaces of the substrate where the thin film circuits are not positioned are prepared protective layers. During the wet etching the attack by the etchant may be avoided. The material of the insulation layer and the protection layer may be the same. The material of the protection layer may be the photo-resistant used in the wet etching process. The invention also disclosed circuit components prepared with the wet etching of this invention.

    摘要翻译: 采用湿式蚀刻方法,其中采用绝缘层生长期间衬底的适当布置。 在位于薄膜电路的区域的衬底表面上制备绝缘层。 在薄膜电路未定位的基板的表面上制备保护层。 在湿蚀刻期间,可以避免蚀刻剂的攻击。 绝缘层和保护层的材料可以相同。 保护层的材料可以是在湿蚀刻工艺中使用的耐光性。 本发明还公开了通过本发明的湿式蚀刻制备的电路部件。

    Etching recipe for the CrSi film
    2.
    发明授权
    Etching recipe for the CrSi film 失效
    刻蚀CrSi薄膜配方

    公开(公告)号:US5593601A

    公开(公告)日:1997-01-14

    申请号:US456918

    申请日:1995-06-01

    IPC分类号: H01L21/02 B44C1/22 C23C1/00

    CPC分类号: H01L28/24

    摘要: An etchant recipe suitable for the photo-etching process of the CrSi metalized film in the patterning of electronic circuitry. The etchant comprises 100 to 120 parts of 36.5 to 38% HCl, 1.0 to 2.0 parts of 48.8 to 49.2% HF, 0 to 10 parts of 30.0 to 32.0% H.sub.2 O.sub.2 and 50 to 100 parts of 85 to 87% H.sub.3 PO.sub.4. A 0.1 g/100 cc wetting agent is optionally added.

    摘要翻译: 适用于在电子电路图案化中的CrSi金属化膜的光蚀刻工艺的蚀刻剂配方。 蚀刻剂包含100至120份36.5至38%HCl,1.0至2.0份48.8至49.2%HF,0至10份30.0至32.0%H 2 O 2和50至100份85至87%H 3 PO 4。 任选地加入0.1g / 100cc润湿剂。

    Numeric key-based chinese address inputting method
    3.
    发明授权
    Numeric key-based chinese address inputting method 失效
    基于数字键的中文地址输入法

    公开(公告)号:US06636163B1

    公开(公告)日:2003-10-21

    申请号:US09603357

    申请日:2000-06-26

    申请人: Hsien-Fen Hsieh

    发明人: Hsien-Fen Hsieh

    IPC分类号: H03M1100

    CPC分类号: G06F3/0233 G06F3/018

    摘要: A numeric key-based Chinese-language inputting method, which enables the rapid inputting of a Chinese-language address in accordance with using numeric keys includes determining as to a numerical inputting mode, or a single Chinese character inputting mode, or an address inputting mode, and for a numerical inputting mode, processing in accordance with a numerical processing step, and for a single Chinese character inputting mode, processing in accordance with a single Chinese character processing step, and for an address inputting mode, and processing in accordance with an address data processing step. Thereafter, a Chinese-language address, made up of characters and numerals detected in accordance with each step, is outputted to a display portion for visual representation.

    摘要翻译: 一种基于数字键的中文输入方法,能够根据数字键快速输入中文地址包括确定数字输入模式或单个汉字输入模式或地址输入模式 ,并且对于数字输入模式,根据数字处理步骤的处理和用于单个汉字输入模式的处理,根据单个汉字处理步骤的处理和用于地址输入模式的处理,以及根据 地址数据处理步骤。 此后,将由根据每个步骤检测的字符和数字构成的中文地址输出到用于视觉表示的显示部分。