发明授权
- 专利标题: Electron source and electron beam apparatus
- 专利标题(中): 电子源和电子束装置
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申请号: US353903申请日: 1994-12-12
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公开(公告)号: US5594296A公开(公告)日: 1997-01-14
- 发明人: Hideaki Mitsutake , Naoto Nakamura , Yoshihisa Sano
- 申请人: Hideaki Mitsutake , Naoto Nakamura , Yoshihisa Sano
- 申请人地址: JPX Tokyo
- 专利权人: Canon Kabushiki Kaisha
- 当前专利权人: Canon Kabushiki Kaisha
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX5-346990 19931227
- 主分类号: G06F3/147
- IPC分类号: G06F3/147 ; H01J1/316 ; H01J29/84 ; H01J31/12 ; H01J1/30 ; H01J21/10
摘要:
An electron source or electron beam apparatus comprises an electron-emitting device and a shield member disposed above the electron-emitting device. The electron-emitting device generates an electric field component, when energized, that is parallel to a substrate surface on which the electron-emitting device is disposed, while the shield member has an aperture which allows electrons emitted from the electron-emitting device to pass therethrough, but blocks off charged particles flying toward the electron emitting device.
公开/授权文献
- US4920451A Moisture-sensitive element 公开/授权日:1990-04-24