发明授权
- 专利标题: Semiconductor storage device
- 专利标题(中): 半导体存储设备
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申请号: US267267申请日: 1994-06-28
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公开(公告)号: US5596535A公开(公告)日: 1997-01-21
- 发明人: Tathunori Mushya , Masayasu Kawamura , Shunichi Sukegawa
- 申请人: Tathunori Mushya , Masayasu Kawamura , Shunichi Sukegawa
- 申请人地址: TX Dallas
- 专利权人: Texas Instruments Incorporated
- 当前专利权人: Texas Instruments Incorporated
- 当前专利权人地址: TX Dallas
- 优先权: JPX5-181957 19930628
- 主分类号: G11C11/401
- IPC分类号: G11C11/401 ; G11C29/00 ; G11C29/04 ; H01L21/82 ; G11C7/00 ; G11C8/00
摘要:
A semiconductor storage device equipped with redundant circuits designed to increase the operating speed and to simplify the layout by providing for the detection of the storage of a faulty address and access to the faulty address so as to substitute a spare word line for a faulty word line. The semiconductor storage device includes a MOSFET for causing current to flow through a pair of fuse means by a complementary address signal at one end of a fuse means corresponding to each bit of the faulty address. The other end thereof is connected to a wired OR logic so as to generate a decision signal. The fuse means corresponding to the MOSFET which is turned on by the faulty address signal is cut off to store a faulty address. The faulty address storage and comparison units can be formed with the pair of fuses and the MOSFET. High-speed operation and a high-density layout in the form of a matrix can thus be achieved efficiently by switching the faulty circuit to a spare circuit while the normal decoder is operating.
公开/授权文献
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