发明授权
US5598015A Hetero-junction bipolar transistor and semiconductor devices using the
same
失效
异质结双极晶体管和使用其的半导体器件
- 专利标题： Hetero-junction bipolar transistor and semiconductor devices using the same
- 专利标题（中）： 异质结双极晶体管和使用其的半导体器件
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申请号： US357342申请日： 1994-12-15
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公开(公告)号： US5598015A公开(公告)日： 1997-01-28
- 发明人: Tomonori Tanoue , Hiroshi Masuda , Tohru Nakamura , Takahiro Onai , Katsuyoshi Washio
- 申请人： Tomonori Tanoue , Hiroshi Masuda , Tohru Nakamura , Takahiro Onai , Katsuyoshi Washio
- 申请人地址： JPX Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX4-249192 19920918
- 主分类号： H01L29/205
- IPC分类号： H01L29/205 ; H01L21/331 ; H01L29/73 ; H01L29/737 ; H01L31/0328 ; H01L27/082 ; H01L31/0336
摘要：
A hetero-junction bipolar transistor having an emitter composed of a semiconductor having a wider forbidden band width than that of a semiconductor constituting a base is disclosed. In the transistor, the emitter and the electrode leader area composed of a single crystalline semiconductor are provided being extended from the upper part of the emitter to the surface of the base through an insulating layer, for the purpose of making it possible to miniaturize the transistor and to operate the transistor at a high-speed by decreasing the emitter resistance.
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