发明授权
US5598037A Semiconductor device with a contact member made of semiconductor
material having a columnar structure
失效
具有由具有柱状结构的半导体材料制成的接触构件的半导体器件
- 专利标题： Semiconductor device with a contact member made of semiconductor material having a columnar structure
- 专利标题（中）： 具有由具有柱状结构的半导体材料制成的接触构件的半导体器件
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申请号： US404746申请日： 1995-03-15
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公开(公告)号： US5598037A公开(公告)日： 1997-01-28
- 发明人: Shin Kikuchi , Mamoru Miyawaki , Genzo Monma , Hayao Ohzu , Shunsuke Inoue , Yoshio Nakamura , Takeshi Ichikawa , Osamu Ikeda , Tetsunobu Kohchi
- 申请人： Shin Kikuchi , Mamoru Miyawaki , Genzo Monma , Hayao Ohzu , Shunsuke Inoue , Yoshio Nakamura , Takeshi Ichikawa , Osamu Ikeda , Tetsunobu Kohchi
- 申请人地址： JPX Tokyo
- 专利权人： Canon Kabushiki Kaisha
- 当前专利权人： Canon Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX3-92304 19910423; JPX3-92305 19910423; JPX3-97243 19910426; JPX3-184168 19910628; JPX3-184169 19910628; JPX3-184170 19910628; JPX3-184171 19910628
- 主分类号： H01L27/115
- IPC分类号： H01L27/115 ; H01L27/02 ; H01L29/10
摘要：
A semiconductor device including: an insulated gate type transistor having a columnar semiconductor region formed on the main side of a semiconductor substrate, a gate electrode formed on the side surface of the columnar semiconductor region while interposing a gate insulating film and main electrode regions respectively formed on and formed below the columnar semiconductor region; and a memory element which is formed on the upper main electrode region and which can be broken electrically.