摘要:
A semiconductor device including: an insulated gate type transistor having a columnar semiconductor region formed on the main side of a semiconductor substrate, a gate electrode formed on the side surface of the columnar semiconductor region while interposing a gate insulating film and main electrode regions respectively formed on and formed below the columnar semiconductor region; and a memory element which is formed on the upper main electrode region and which can be broken electrically.
摘要:
A semiconductor device including: an insulated gate type transistor having a columnar semiconductor region formed on the main side of a semiconductor substrate, a gate electrode formed on the side surface of the columnar semiconductor region while interposing a gate insulating film and main electrode regions respectively formed on and formed below the columnar semiconductor region; and a memory element which is formed on the upper main electrode region and which can be broken electrically.
摘要:
A semiconductor device including: an insulated gate type transistor having a columnar semiconductor region formed on the main side of a semiconductor substrate, a gate electrode formed on the side surface of the columnar semiconductor region while interposing a gate insulating film and main electrode regions respectively formed on and formed below the columnar semiconductor region; and a memory element which is formed on the upper main electrode region and which can be broken electrically.
摘要:
A semiconductor device including: an insulated gate type transistor having a columnar semiconductor region formed on the main side of a semiconductor substrate, a gate electrode formed on the side surface of the columnar semiconductor region while interposing a gate insulating film and main electrode regions respectively formed on and formed below the columnar semiconductor region; and a memory element which is formed on the upper main electrode region and which can be broken electrically.
摘要:
A semiconductor device comprises a capacitor consisting of an Al region formed on a semiconductor substrate, an Al oxide film formed on a surface of said Al region, and electrodes opposed to said Al region with interposition of said Al oxide film.
摘要:
A solid-state image pickup device includes an adder adding signals from pixels to achieve a high S/N, while performing both static image and moving image pickup. The device has a pixel unit having pixels arranged two-dimensionally and outputs pixel signals derived by photoelectric conversion. The device operates in a first mode of reading a pixel signal of every pixel, and a second mode of adding and reading a plurality of pixel signals. Variable gain column amplifiers perform readout at different gains in the first and second modes. The device also has output lines where output signals from the pixels arranged in one line are outputted respectively, and at least one of the variable gain amplifier is connected to each of the output lines. The gain at the time of readout in the second mode is higher than the gain at the time of readout in the first mode.
摘要:
In a solid-state image pickup device which has means of adding signals from a plurality of pixels, the present invention achieves a high S/N, and achieves a solid-state image pickup device suitable for both of static image pickup and moving image pickup. The solid-state image pickup device is a solid-state image pickup device which has a pixel unit has a plurality of pixels which are arranged two-dimensionally and output pixel signals derived by a photoelectric conversion, and is provided with a first mode of reading a pixel signal every pixel, and a second mode of adding and reading a plurality of pixel signals, having a variable gain column amplifier for performing readout at different gains in the first mode and second mode. The solid-state image pickup device has a plurality of output lines where output signals from a plurality of pixels arranged in one line are outputted respectively, and at least one of the variable gain amplifier is connected to each of the plurality of output lines. A gain at the time of readout in the second mode is made to be higher than a gain at the time of readout in the first mode.
摘要:
A solid-state image pickup device which has means of adding signals from plural pixels, which achieves a high S/N and a pickup device suitable for both static and moving image pickup. The device has a pixel unit having plural pixels arranged two-dimensionally and outputting pixel signals derived by photoelectric conversion, and has a first mode reading a pixel signal every pixel, and a second mode adding and reading a plurality of pixel signals, having a variable gain column amplifier for performing readout at different gains in the first mode and second mode. The device has plural output lines where signals from plural pixels arranged in one line are outputted respectively, and at least one amplifier is connected to each of the plurality of output lines. Gain at time of second mode readout is higher than gain at time of first mode readout.
摘要:
In a solid-state image pickup device which has means of adding signals from a plurality of pixels, the present invention achieves a high S/N, and achieves a solid-state image pickup device suitable for both of static image pickup and moving image pickup. The solid-state image pickup device is a solid-state image pickup device which has a pixel unit has a plurality of pixels which are arranged two-dimensionally and output pixel signals derived by a photoelectric conversion, and is provided with a first mode of reading a pixel signal every pixel, and a second mode of adding and reading a plurality of pixel signals, having a variable gain column amplifier for performing readout at different gains in the first mode and second mode. The solid-state image pickup device has a plurality of output lines where output signals from a plurality of pixels arranged in one line are outputted respectively, and at least one of the variable gain amplifier is connected to each of the plurality of output lines. A gain at the time of readout in the second mode is made to be higher than a gain at the time of readout in the first mode.
摘要:
A semiconductor device is provided having a first semiconductor region comprising an n-type semiconductor and a second semiconductor region of an n-type semiconductor having a higher resistivity than the first semiconductor region. An insulation film is provided adjacent to the semiconductor region having an aperture therein, and an electrode region is provided in the aperture. A third semiconductor region comprising a p-type semiconductor is provided at a junction between the insulation film and the electrode region. The electrode comprises a monocrystalline metal and constitutes a Schottky junction with the semiconductor region. An ohmic electrode comprising aluminum is arranged on the electrode region.