Invention Grant
US5599733A Method using cadmium-rich CdTe for lowering the metal vacancy
concentrations of HgCdTe surfaces
失效
使用富镉CdTe降低HgCdTe表面的金属空位浓度的方法
- Patent Title: Method using cadmium-rich CdTe for lowering the metal vacancy concentrations of HgCdTe surfaces
- Patent Title (中): 使用富镉CdTe降低HgCdTe表面的金属空位浓度的方法
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Application No.: US342530Application Date: 1994-11-21
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Publication No.: US5599733APublication Date: 1997-02-04
- Inventor: Chang-Feng Wan , John H. Tregilgas
- Applicant: Chang-Feng Wan , John H. Tregilgas
- Applicant Address: TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: TX Dallas
- Main IPC: H01L21/469
- IPC: H01L21/469 ; H01L31/103 ; H01L21/225
Abstract:
A hybrid focal plane array has p-n junction photodiodes formed in a substrate (10) of HgCdTe which is passivated by a cap layer (12) of Cd-rich CdTe. The active surface of the HgCdTe substrate is passivated by annealing at a temperature sufficient to support interdiffusion between the Cd-rich CdTe capping layer (12) and the HgCdTe substrate (10). Use of the CdTe capping layer (12) with a slight excess Cd maintains the surface of the HgCdTe substrate (10) in a metal-rich phase condition.
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