公开(公告)号：US5079192A

公开(公告)日：1992-01-07

申请号：US573515

申请日：1990-08-24

Applicant: John H. Tregilgas ,  Dipankar Chandra

Inventor： John H. Tregilgas ,  Dipankar Chandra

IPC: H01L21/477

CPC classification number: H01L21/477 ,  Y10S148/064

Abstract: The disclosure relates to a method of forming samples of alloys of group II-VI compositions having minimum dislocations, comprising the steps of providing a sample of a group II-VI compound, providing an enclosed ampoule having the sample at one end portion thereof and a group II element of the compound at an end portion remote from the one end portion, heating the sample to a temperature in the range of 350 to the melting temperature of the compound for about one hour while maintaining the group II element at a temperature more than 200.degree. C. below the sample temperature, heating the group II element to a temperature from about 5.degree. to about 50.degree. C. below the temperature of the sample while maintaining the sample at a temperature in the range of 350.degree. to 650.degree. C. both of about 15 minutes to about 4 hours, and then stoichiometrically annealing the sample at a temperature below 325.degree. C.

Abstract translation: 本公开涉及一种形成具有最小位错的II-VI族组合物的合金样品的方法，包括提供II-VI族化合物样品的步骤，提供在其一个端部具有样品的封闭的安瓿和 在远离一个端部的端部处的化合物的II族元素，将样品加热至化合物的熔融温度350℃至约1小时的温度，同时保持II族元素的温度高于 低于样品温度200℃，将II族元件加热到低于样品温度约5℃至约50℃的温度，同时将样品保持在350至650℃的温度 约15分钟至约4小时，然后在低于325℃的温度下化学计量地退火样品。

公开(公告)号：US4504334A

公开(公告)日：1985-03-12

申请号：US564872

申请日：1983-12-23

Applicant: Herbert F. Schaake ,  John H. Tregilgas ,  Jeffrey D. Beck

Inventor： Herbert F. Schaake ,  John H. Tregilgas ,  Jeffrey D. Beck

IPC: H01L21/477 ,  H01L21/324 ,  H01L21/385

CPC classification number: H01L21/477

Abstract: The disclosure relates to a method for removing the unwanted impurities from an HgCdTe alloy which consists of the steps of depositing a thin film on the order of from about 1 to about 100 microns in thickness of tellurium onto the backside of a mercury cadmium telluride bar to insure the presence of a substantial amount of excess tellurium on the backside of the alloy bar and allow the gettering mechanism to work. A protective film to shield the tellurium film from mercury ambient atmosphere is then optionally placed over the tellurium film. The protective film can be formed of a silicon oxide such as SiO and is preferably in the range of about 1000 angstroms to 10 microns or more in thickness. The bar with the tellurium and protective film thereon is then annealed at a temperature of less than 450.degree. C., preferably about 280.degree. C., for a period of from about one day to about four weeks in a saturated mercury atmosphere to allow the impurities in the alloy to diffuse to the backside thereof and into the tellurium layer. The bulk of the impurities will travel into the tellurium layer within a matter of several days at the preferred temperature noted hereinabove. The tellurium layer and protective film are then removed such as by grinding, etching or other appropriate method to remove the impurities from the alloy bar.

Abstract translation: 本公开涉及一种从HgCdTe合金中除去不需要的杂质的方法，该方法包括以下步骤：将碲厚度约1至约100微米的薄膜沉积到碲化汞镉池的背面上， 确保在合金棒的背面存在大量过量的碲，并允许吸气机构工作。 然后任选地将碲膜从汞环境大气屏蔽的保护膜放置在碲膜上。 保护膜可以由诸如SiO的氧化硅形成，并且优选在约1000埃到10微米或更大的范围内。 然后将其上具有碲和保护膜的棒在饱和汞气氛中在小于450℃，优选约280℃的温度下退火约1天至约4周的时间，以使 合金中的杂质扩散到其背面并进入碲层。 在上述优选温度下，大部分杂质将在数天内进入碲层。 然后通过研磨，蚀刻或其它适当的方法除去碲层和保护膜以从合金棒中除去杂质。

公开(公告)号：US4481044A

公开(公告)日：1984-11-06

申请号：US591903

申请日：1984-03-21

Applicant: Herbert F. Schaake ,  John H. Tregilgas

Inventor： Herbert F. Schaake ,  John H. Tregilgas

IPC: C22C1/00 ,  H01L21/477 ,  C21D1/74

CPC classification number: C22C1/007 ,  H01L21/477 ,  Y10S438/971

Abstract: The dislocation density near the surface of Hg.sub.1-x Cd.sub.x Te alloys is substantially reduced by annealing the material at around 600.degree. C. in a mercury saturated ambient for periods of four hours or more, prior to post annealing at lower temperatures to control the metal vacancy concentration. This procedure allows dislocation reduction by climb, reduces the concentration of metal vacancies which can collapse to form dislocation loops or contribute to dislocation multiplication, and reduces tellurium precipitates which contribute to dislocation multiplication during subsequent post annealing.

Abstract translation: 在Hg1-xCdxTe合金表面附近的位错密度通过在大约600℃下在汞饱和环境中退火4小时或更长的时间，在较低温度下退火之后大大降低材料，以控制金属空位浓度 。 该步骤允许通过爬升减少位错，减少可能塌陷以形成位错环或有助于位错倍增的金属空位的浓度，并且减少在随后的后退火期间有助于位错倍增的碲沉淀物。

公开(公告)号：US4684415A

公开(公告)日：1987-08-04

申请号：US789231

申请日：1985-10-18

Applicant: John H. Tregilgas ,  Thomas L. Polgreen

Inventor： John H. Tregilgas ,  Thomas L. Polgreen

IPC: H01L21/388

CPC classification number: H01L21/388

Abstract: Methods of doping Hg.sub.1-x Cd.sub.x Te (50) with fast diffusing dopants by immersion in a mercury reservoir (32) doped with the desired dopants are disclosed. Also, methods of core annihilation of Hg.sub.1-x Cd.sub.x Te slices or ingots by immersion in a heated mercury reservoir are disclosed. Preferred embodiments include dopants such as copper in a mercury reservoir (32) that is heated to 270.degree. C. for a Hg.sub.1-x Cd.sub.x Te slice, and a reservoir (32) that is heated to 150.degree. C. for a thin film of Hg.sub.1-x Cd.sub.xn Te on a CdTe substrate.

Abstract translation: 公开了通过浸渍在掺杂有所需掺杂剂的汞储存器（32）中来掺杂快速扩散掺杂剂的Hg1-xCdxTe（50）的方法。 此外，公开了通过浸入加热的汞储存器中的Hg1-xCdxTe切片或锭的核心湮灭的方法。 优选的实施方案包括对于Hg1-xCdxTe切片加热至270℃的汞储存器（32）中的诸如铜的掺杂剂，以及用于Hg1-xCdxTe薄层的加热至150℃的储存器（32） xCdxnTe在CdTe基板上。

公开(公告)号：US6143630A

公开(公告)日：2000-11-07

申请号：US255588

申请日：1994-06-09

Applicant: John H. Tregilgas

Inventor： John H. Tregilgas

IPC: H01L21/46 ,  H01L21/477 ,  H01L21/322

CPC classification number: H01L21/46 ,  H01L21/477

Abstract: A method of gettering impurities from substrates (304) such as CdTe and CdZnTe by formation of liquid droplets (306) of a lower melting point material such as Cd or Te on the substrate during an anneal. The droplets may form from the melting of a thin layer of the material which had been deposited on the substrate (304). A subsequent mechanical removal of the cooled and solidified droplets also removes the gettered impurities.

Abstract translation: 在退火期间，通过在基板上形成诸如Cd或Te的较低熔点的材料的液滴（306），从而从诸如CdTe和CdZnTe的基底（304）中除去杂质的方法。 液滴可以从沉积在基板（304）上的材料的薄层的熔化形成。 随后机械去除冷却和固化的液滴也能除去杂质。

公开(公告)号：US5804463A

公开(公告)日：1998-09-08

申请号：US777861

申请日：1996-12-31

Applicant: John H. Tregilgas ,  Thomas W. Orent

Inventor： John H. Tregilgas ,  Thomas W. Orent

IPC: H01L31/18

CPC classification number: H01L31/1832

Abstract: A P-type substrate for infrared photo diodes can be produced by the present invention. A CdZnTe substrate is utilized. A first layer of HgCdTe is formed by liquid phase epitaxy on the substrate. A CdTe passivation layer is formed over the HgCdTe. A ZnS layer is formed over the CdTe layer. A noble metal is introduced into either the CdTe or ZnS layers. During a subsequent baking of the composite, the noble metal diffuses throughout the composite and into the HgCdTe layer.

Abstract translation: 用于红外光电二极管的P型衬底可以通过本发明生产。 使用CdZnTe衬底。 HgCdTe的第一层通过液相外延在基板上形成。 在HgCdTe上形成CdTe钝化层。 在CdTe层上形成ZnS层。 将一种贵金属引入到CdTe或ZnS层中。 在复合材料的随后烘烤期间，贵金属在整个复合材料中扩散并进入HgCdTe层。

公开(公告)号：US5599733A

公开(公告)日：1997-02-04

申请号：US342530

申请日：1994-11-21

Applicant: Chang-Feng Wan ,  John H. Tregilgas

Inventor： Chang-Feng Wan ,  John H. Tregilgas

IPC: H01L21/469 ,  H01L31/103 ,  H01L21/225

CPC classification number: H01L21/469 ,  H01L31/1032 ,  Y10S438/971

Abstract: A hybrid focal plane array has p-n junction photodiodes formed in a substrate (10) of HgCdTe which is passivated by a cap layer (12) of Cd-rich CdTe. The active surface of the HgCdTe substrate is passivated by annealing at a temperature sufficient to support interdiffusion between the Cd-rich CdTe capping layer (12) and the HgCdTe substrate (10). Use of the CdTe capping layer (12) with a slight excess Cd maintains the surface of the HgCdTe substrate (10) in a metal-rich phase condition.

Abstract translation: 混合焦平面阵列具有形成在HgCdTe的衬底（10）中的p-n结光电二极管，其被富含Cd的CdTe的覆盖层（12）钝化。 通过在足以支持富Cd的CdTe覆盖层（12）和HgCdTe衬底（10）之间的相互扩散的温度下退火来钝化HgCdTe衬底的活性表面。 使用具有轻微过量Cd的CdTe覆盖层（12）将HgCdTe衬底（10）的表面维持在富金相的状态。

公开(公告)号：US4507160A

公开(公告)日：1985-03-26

申请号：US564871

申请日：1983-12-23

Applicant: Jeffrey D. Beck ,  Herbert F. Schaake ,  John H. Tregilgas ,  Michael A. Kinch

Inventor： Jeffrey D. Beck ,  Herbert F. Schaake ,  John H. Tregilgas ,  Michael A. Kinch

IPC: H01L21/385 ,  H01L21/477 ,  H01L21/324

CPC classification number: H01L21/385 ,  H01L21/477

Abstract: The disclosure relates to a method for reducing impurity concentration in mercury cadmium telluride alloys wherein impurities are attracted to a region saturated with second phase tellurium during annealing in a saturated mercury atmosphere where the second phase tellurium and the impurities attracted thereto can be removed by polishing, etching, grinding, or the like.

Abstract translation: 本公开涉及一种降低汞镉碲合金中的杂质浓度的方法，其中在饱和汞气氛中退火期间，杂质被吸引到饱和第二相碲的区域，其中第二相碲及其吸附的杂质可通过抛光除去， 蚀刻，研磨等。

公开(公告)号：US4462959A

公开(公告)日：1984-07-31

申请号：US365135

申请日：1982-04-05

Applicant: John H. Tregilgas

Inventor： John H. Tregilgas

IPC: H01L21/385 ,  H01L31/0296 ,  H01L31/18 ,  H01L3/20

CPC classification number: H01L31/1832 ,  H01L21/385 ,  H01L31/02966 ,  Y10S420/903 ,  Y10S438/925

Abstract: Controllable doping of HgCdTe in concentrations low enough to be useful for electronic devices is accomplished by dissolving the desired dopant in mercury at or below the solubility limit. The mercury is then diluted with pure mercury, to lower the dopant concentration to that which will produce the desired impurity concentration in the end product. The doped mercury is then compounded according to conventional methods, to produce reproducibly doped HgCdTe of uniform composition.

Abstract translation: 通过将低于足以用于电子器件的浓度的HgCdTe的可控掺杂通过将所需的掺杂剂溶解在等于或低于溶解度极限的汞中来实现。 然后用纯汞稀释汞，以将掺杂剂浓度降低到在最终产物中产生所需杂质浓度的浓度。 然后根据常规方法将掺杂的汞复合，以产生均匀组成的可重复掺杂的HgCdTe。

公开(公告)号：US5552924A

公开(公告)日：1996-09-03

申请号：US339363

申请日：1994-11-14

Applicant: John H. Tregilgas

Inventor： John H. Tregilgas

IPC: G02B26/08

CPC classification number: G02B26/0841

Abstract: An electrically addressable, integrated, monolithic, micromirror device (10) is formed by the utilization of sputtering techniques, including various metal and oxide layers, photoresists, liquid and plasma etching, plasma stripping and related techniques and materials. The device (10) includes a selectively electrostatically deflectable mass or mirror (12) of supported by one or more beams (18) formed by sputtering and selective etching. The beams (18) are improved by being constituted of an electrically conductive, intermetallic aluminum compound, or a mixture of two or more such compounds. The materials constituting the improved beams (18) have relatively high melting points, exhibit fewer primary slip systems than FCC crystalline structures, are etchable by the same or similar etchants and procedures used to etch aluminum and aluminum alloy, and are stronger and experience less relaxation than aluminum or aluminum alloys. Accordingly, the improved beams (18) exhibit increased strength, and decreased relaxation without requiring significant or radical deviations from the typical processing steps employed to produce the otherwise unaltered device.

Abstract translation: 通过利用包括各种金属和氧化物层，光致抗蚀剂，液体和等离子体蚀刻，等离子体剥离和相关技术和材料的溅射技术形成电可寻址，集成的单片微镜器件（10）。 装置（10）包括由溅射和选择性蚀刻形成的一个或多个光束（18）支撑的选择性静电偏转质量块或反射镜（12）。 通过由导电的金属间铝化合物或两种或更多种这样的化合物的混合物构成梁（18）。 构成改进梁（18）的材料具有相对较高的熔点，比FCC晶体结构显示更少的主滑移系统，可以通过蚀刻铝和铝合金的相同或相似的蚀刻剂和程序进行蚀刻，并且更强并且经历较少的松弛 比铝或铝合金。 因此，改进的梁（18）表现出增加的强度和减小的松弛，而不需要与用于产生否则未改变的装置的典型处理步骤的显着或根本的偏差。