A voltage boosting circuit for a semiconductor memory device has a clock generator for supplying a chip master clock determining an active state and a stand-by state in respective response to first and second states thereof, for generating a detector control signal a first delay time after the first state of the chip master clock is generated, and for generating a latch control signal a second delay time after the first state of the chip master clock is generated. A boosting voltage detector responds to the detector control signal and the latch control signal to generate a detecting signal indicative of a current state of a boosting voltage potential. First and second boosting voltage generators generate the boosting voltage potential, respectively operating in the stand-by state and active state in accordance with the detecting signal and delayed chip master clock signal.