摘要:
A system for braking an escalator or moving walkway includes a handrail and passenger support in registration with one another so as to move together. A braking tensioner selectively increases tension in the handrail during operation. The increased tension serves to frictionally brake the handrail and hence the passenger support. The braking tensioner may be located in any of various locations depending upon system design, and may be driven in any suitable manner, e.g., hydraulically, electrically, electromagnetically, and so on. Frictional wear on the handrail is reduced by the fact that the described braking system spreads the frictional load over a large area of the handrail, e.g., the many locations where the handrail contacts the underlying support throughout its length.
摘要:
There is disclosed a parallel test circuit for a semiconductor memory device having a memory army with a plurality of memory cells and a plurality of comparators used for high-speed memory cell test, including a plurality of fist comparators performing first comparison with respect to data transmitted through a plurality of data output lines formed near memory blocks of the memory array; a plurality of second comparators coupled in common with each output terminal of the first comparators and performing second comparison with respect to output data of the first comparators; a multiplexer multiplexing output of the second comparator; first and second switches alternatively connected to an output terminal of the multiplexer; and a data output buffer coupled in common with output terminals of the first and second switches and buffering outputs of the first and second switches. The multiplexer is connected to the first switches for a first mode operation, and is connected to the second switch for a second mode operation to thereby perform a two-way data test.
摘要:
A voltage boosting circuit for a semiconductor memory device has a clock generator for supplying a chip master clock determining an active state and a stand-by state in respective response to first and second states thereof, for generating a detector control signal a first delay time after the first state of the chip master clock is generated, and for generating a latch control signal a second delay time after the first state of the chip master clock is generated. A boosting voltage detector responds to the detector control signal and the latch control signal to generate a detecting signal indicative of a current state of a boosting voltage potential. First and second boosting voltage generators generate the boosting voltage potential, respectively operating in the stand-by state and active state in accordance with the detecting signal and delayed chip master clock signal.
摘要:
A drive chain band for a chain drive device having chain links and pins is provided. The drive chain band may include one or more drive bands, and a plurality of connectors disposed on the one or more drive bands. Each connector may have a toothed profile configured to directly receive and engage the pins.
摘要:
A curvature-adjustable handrail length compensation device for an escalator or a moving walkway is provided. The device comprises a frame, handrail support mounted along a length of the frame, and springs mounted to the frame to elastically support the handrail support. Each handrail support includes a supporting rod movably mounted through the frame, a first supporting roller mounted to an end of the supporting rod to support the handrail, and a stopper formed at the other end of the supporting rod. The spring is provided between the frame and the first supporting roller, and biases the first supporting roller away from the frame.
摘要:
A current control circuit capable of minimizing changes in an output high voltage VOH and an output low voltage VOL and quickly and accurately bringing a divided voltage to a steady state, and a packet-type semiconductor memory device including the current control circuit. The current control circuit includes a first differential amplification type buffer for transmitting the voltage of a first pad, that is, the output high voltage VOH, without change in response to a current control enable signal, a second differential amplification type buffer for transmitting the voltage of a second pad, that is, the output low voltage VOL, without change in response to the current control enable signal, and a voltage divider for dividing a voltage ranging between the voltage outputs of the first and second differential amplification buffers, and outputting the divided voltage. Accordingly, in the packet-type semiconductor memory device including the current control circuit, the current control circuit minimizes changes in the output high voltage VOH and the output low voltage VOL and quickly and accurately brings a divided voltage to a steady state, so that the current driving capability of an output driver for driving the second pad can be quickly controlled.
摘要:
The present invention is related to a system which is portable and attache the body of a trainee so that the trainee can practice navigating of a model airplane at an arbitrary location, contrary to the system of a large-sized airplane. According to an object of the present invention there is provided a trainee navigates a model airplane virtually by simulating a model airplane using a computer by combining the three-dimensional virtual image of a model airplane and the actual image of the training site by a computer. The simulation method of a radio-controlled model airplane of the present invention is comprising the steps of recording various airplane models into the computer system; simulating the airplane model by processing signals received from the controller; producing images by rendering the results of signal processing of the simulation step; showing images which are to appear in two eyes of the user at both indicators of HMD(head-mounted display) or STHMD(see-through head-mounted display) in order to convert produced images to be three-dimensional; and producing the unique sound of the corresponding airplane model in three dimensions and listening the sound to the headphone of HMD or STHMD.
摘要:
A fast data transmission circuit for a semiconductor memory minimizes voltage variations of a data transmission line without the use of a separate data transmission voltage. The data transmission circuit includes a pair of input nodes, a data transmission line pair, a pair of sensing nodes, a pair of output nodes, and a control electrode. Prior to data transmission, the output nodes are pulled up to a high voltage state, the data transmission line pair is pulled down to a low voltage state, and the sensing nodes are held between the high and low voltage states. When the control pulse is applied to the control electrode, the sensing node voltage levels are transferred to the data transmission line pair by the sensing voltage transfer circuit. When one input node is pulled to a low voltage state, a corresponding one voltage level on one transmission line is changed, causing a corresponding change of voltage at one of the sensing nodes. The voltage difference at the sensing nodes causes a corresponding one of the output nodes to go to a low voltage state while the other output node remains at the high voltage state.
摘要:
A semiconductor integrated circuit includes a plurality of signal wires and an array of capacitor-based memory cells. The capacitors of the memory cells are electrically coupled to a common voltage source node where a voltage source provides supply power to the array. Shield wires positioned proximal to the signal wires are electrically coupled to the common voltage source node. A shield capacitor may be provided between the signal wires and the common voltage source node to provide further noise suppression.
摘要:
A method for detecting an overvoltage signal applied to a semiconductor memory device address pin reduces stress on the device and simplifies the testing process by dividing the voltage of the overvoltage signal and comparing it to a reference voltage, thereby generating a difference signal. The difference signal is buffered by a drive stage which generates a test mode output signal that places the memory device in a test mode. An overvoltage detection circuit for implementing this method includes a comparison signal generator having a resistive voltage divider for dividing the overvoltage signal and generating a comparison signal. A differential amplifier compares the comparison signal to a reference signal from a reference signal generator. The differential amplifier generates a difference signal which is coupled to a drive stage which generates a test mode output signal. The comparison signal generator, the differential amplifier, and the drive stage can be enabled in response to a test mode enable signal.