发明授权
- 专利标题： Semiconductor laser device and method of designing the same
- 专利标题（中）： 半导体激光器件及其设计方法
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申请号： US430497申请日： 1995-04-28
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公开(公告)号： US5608752A公开(公告)日： 1997-03-04
- 发明人: Takenori Goto , Nobuhiko Hayashi , Teruaki Miyake , Mitsuaki Matsumoto , Kenichi Matsukawa , Daisuke Ide , Koutarou Furusawa , Akira Ibaraki , Keiichi Yodoshi , Tatsuya Kunisato
- 申请人： Takenori Goto , Nobuhiko Hayashi , Teruaki Miyake , Mitsuaki Matsumoto , Kenichi Matsukawa , Daisuke Ide , Koutarou Furusawa , Akira Ibaraki , Keiichi Yodoshi , Tatsuya Kunisato
- 申请人地址： JPX Osaka-fu
- 专利权人： Sanyo Electric Co., Ltd.
- 当前专利权人： Sanyo Electric Co., Ltd.
- 当前专利权人地址： JPX Osaka-fu
- 优先权： JPX6-092306 19940428; JPX7-062265 19950322
- 主分类号： H01S5/00
- IPC分类号： H01S5/00 ; H01S5/065 ; H01S5/223 ; H01S5/227 ; H01S3/19
摘要：
In a semiconductor laser device comprising an n-type cladding layer, an active layer formed on the cladding layer, a p-type cladding layer formed on the active layer, and a p-type saturable light absorbing layer provided in the p-type cladding layer, the current confinement width for confining current injected into the active layer being W, the thickness d.sub.a of the active layer, the optical confinement factor .GAMMA..sub.a of the active layer, the thickness d.sub.s of the saturable light absorbing layer, the optical confinement factor .GAMMA..sub.s of the saturable light absorbing layer, and the light spot size S on a facet of the semiconductor laser device are so set as to satisfy a predetermined relationship. The reflectivity on a light output facet is set in the range of 10 to 20%.