公开(公告)号：US5608752A

公开(公告)日：1997-03-04

申请号：US430497

申请日：1995-04-28

申请人： Takenori Goto ,  Nobuhiko Hayashi ,  Teruaki Miyake ,  Mitsuaki Matsumoto ,  Kenichi Matsukawa ,  Daisuke Ide ,  Koutarou Furusawa ,  Akira Ibaraki ,  Keiichi Yodoshi ,  Tatsuya Kunisato

发明人： Takenori Goto ,  Nobuhiko Hayashi ,  Teruaki Miyake ,  Mitsuaki Matsumoto ,  Kenichi Matsukawa ,  Daisuke Ide ,  Koutarou Furusawa ,  Akira Ibaraki ,  Keiichi Yodoshi ,  Tatsuya Kunisato

IPC分类号： H01S5/00 ,  H01S5/065 ,  H01S5/223 ,  H01S5/227 ,  H01S3/19

CPC分类号： H01S5/2231 ,  H01S5/0658

摘要： In a semiconductor laser device comprising an n-type cladding layer, an active layer formed on the cladding layer, a p-type cladding layer formed on the active layer, and a p-type saturable light absorbing layer provided in the p-type cladding layer, the current confinement width for confining current injected into the active layer being W, the thickness d.sub.a of the active layer, the optical confinement factor .GAMMA..sub.a of the active layer, the thickness d.sub.s of the saturable light absorbing layer, the optical confinement factor .GAMMA..sub.s of the saturable light absorbing layer, and the light spot size S on a facet of the semiconductor laser device are so set as to satisfy a predetermined relationship. The reflectivity on a light output facet is set in the range of 10 to 20%.

摘要翻译： 在包括n型包覆层，形成在包层上的有源层，形成在有源层上的p型包层和设置在p型包层中的p型可饱和光吸收层的半导体激光器件中， 注入有源层的限流电流的限流宽度为W，有源层的厚度da，有源层的光限制因子GAMMA a，可饱和光吸收层的厚度ds，光限制因子 可饱和光吸收层的GAMMA和半导体激光装置的面上的光斑尺寸S被设定为满足预定关系。 光输出面的反射率设定在10〜20％的范围内。

公开(公告)号：US5416790A

公开(公告)日：1995-05-16

申请号：US147779

申请日：1993-11-04

申请人： Keiichi Yodoshi ,  Akira Ibaraki ,  Masayuki Shono ,  Shoji Honda ,  Takatoshi Ikegami ,  Nobuhiko Hayashi ,  Koutarou Furusawa ,  Atushi Tajiri ,  Toru Ishikawa ,  Kenichi Matsukawa ,  Teruaki Miyake ,  Takenori Goto ,  Mitsuaki Matsumoto ,  Daisuke Ide ,  Yasuyuki Bessho

发明人： Keiichi Yodoshi ,  Akira Ibaraki ,  Masayuki Shono ,  Shoji Honda ,  Takatoshi Ikegami ,  Nobuhiko Hayashi ,  Koutarou Furusawa ,  Atushi Tajiri ,  Toru Ishikawa ,  Kenichi Matsukawa ,  Teruaki Miyake ,  Takenori Goto ,  Mitsuaki Matsumoto ,  Daisuke Ide ,  Yasuyuki Bessho

IPC分类号： H01S5/065 ,  H01S5/20 ,  H01S5/223 ,  H01S5/32 ,  H01S3/19

CPC分类号： H01S5/20 ,  H01S5/2231 ,  H01S5/0658 ,  H01S5/2004 ,  H01S5/3211

摘要： A semiconductor laser with a self-sustained pulsation is disclosed in which a first cladding layer of first conductive type, an active layer and a second cladding layer of second conductive type having a striped ridge are formed in that order on a semiconductor substrate of first conductive type. The first and second cladding layers have a refractive index smaller than and a band gap larger than the active layer. A saturable optical absorbing layer having a band gap of energy substantially equal to the energy corresponding to lasing wavelength is formed in both the first and second cladding layers. Further, a barrier layer having a refractive index smaller than and a band gap larger than the first and second cladding layers is formed between the first cladding layer and the active layer and/or between the active layer and the second cladding layer.

摘要翻译： 公开了一种具有自持脉动的半导体激光器，其中在第一导电半导体衬底上依次形成第一导电类型，有源层和具有条纹脊的第二导电类型的第二包层的第一包层 类型。 第一和第二覆层具有比有源层更大的折射率和更大的带隙。 在第一和第二包层中均形成有具有基本上等于与激发波长相对应的能量的能隙带的饱和光吸收层。 此外，在第一包层和有源层之间和/或有源层和第二包层之间形成折射率小于第一和第二包层的折射率的带隙的阻挡层。

公开(公告)号：US5610096A

公开(公告)日：1997-03-11

申请号：US536370

申请日：1995-09-29

申请人： Keiichi Yodoshi ,  Akira Ibaraki ,  Masayuki Shono ,  Shoji Honda ,  Takatoshi Ikegami ,  Nobuhiko Hayashi ,  Koutarou Furusawa ,  Atushi Tajiri ,  Toru Ishikawa ,  Kenichi Matsukawa ,  Teruaki Miyake ,  Takenori Goto ,  Mitsuaki Matsumoto ,  Daisuke Ide ,  Yasuyuki Bessho

发明人： Keiichi Yodoshi ,  Akira Ibaraki ,  Masayuki Shono ,  Shoji Honda ,  Takatoshi Ikegami ,  Nobuhiko Hayashi ,  Koutarou Furusawa ,  Atushi Tajiri ,  Toru Ishikawa ,  Kenichi Matsukawa ,  Teruaki Miyake ,  Takenori Goto ,  Mitsuaki Matsumoto ,  Daisuke Ide ,  Yasuyuki Bessho

IPC分类号： H01S5/065 ,  H01S5/20 ,  H01S5/223 ,  H01S5/32 ,  H01L21/20

CPC分类号： H01S5/20 ,  H01S5/2231 ,  H01S5/0658 ,  H01S5/2004 ,  H01S5/3211

摘要： A semiconductor laser with a self-sustained pulsation is disclosed in which a first cladding layer of first conductive type, an active layer and a second cladding layer of second conductive type having a striped ridge are formed in that order on a semiconductor substrate of first conductive type. The first and second cladding layers have a refractive index smaller than and a band gap larger than the active layer. A saturable optical absorbing layer having a band gap of energy substantially equal to the energy corresponding to lasing wavelength is formed in both the first and second cladding layers. Further, a barrier layer having a refractive index smaller than and a band gap larger than the first and second cladding layers is formed between the first cladding layer and the active layer and/or between the active layer and the second cladding layer.

摘要翻译： 公开了一种具有自持脉动的半导体激光器，其中在第一导电半导体衬底上依次形成第一导电类型，有源层和具有条纹脊的第二导电类型的第二包层的第一包层 类型。 第一和第二覆层具有比有源层更大的折射率和更大的带隙。 在第一和第二包层中均形成有具有基本上等于与激发波长相对应的能量的能隙带的饱和光吸收层。 此外，在第一包层和有源层之间和/或有源层和第二包层之间形成折射率小于第一和第二包层的折射率的带隙的阻挡层。

公开(公告)号：US5506170A

公开(公告)日：1996-04-09

申请号：US365176

申请日：1994-12-28

申请人： Keiichi Yodoshi ,  Akira Ibaraki ,  Masayuki Shono ,  Shoji Honda ,  Takatoshi Ikegami ,  Nobuhiko Hayashi ,  Koutarou Furusawa ,  Atushi Tajiri ,  Toru Ishikawa ,  Kenichi Matsukawa ,  Teruaki Miyake ,  Takenori Goto ,  Mitsuaki Matsumoto ,  Daisuke Ide ,  Yasuyuki Bessho

发明人： Keiichi Yodoshi ,  Akira Ibaraki ,  Masayuki Shono ,  Shoji Honda ,  Takatoshi Ikegami ,  Nobuhiko Hayashi ,  Koutarou Furusawa ,  Atushi Tajiri ,  Toru Ishikawa ,  Kenichi Matsukawa ,  Teruaki Miyake ,  Takenori Goto ,  Mitsuaki Matsumoto ,  Daisuke Ide ,  Yasuyuki Bessho

IPC分类号： H01S5/065 ,  H01S5/20 ,  H01S5/223 ,  H01S5/32 ,  H01L21/20

CPC分类号： H01S5/20 ,  H01S5/2231 ,  H01S5/0658 ,  H01S5/2004 ,  H01S5/3211

摘要： A semiconductor laser with a self-sustained pulsation is disclosed in which a first cladding layer of first conductive type, an active layer and a second cladding layer of second conductive type having a striped ridge are formed in that order on a semiconductor substrate of first conductive type. The first and second cladding layers have a refractive index smaller than and a band gap larger than the active layer. A saturable optical absorbing layer having a band gap of energy substantially equal to the energy corresponding to lasing wavelength is formed in both the first and second cladding layers. Further, a barrier layer having a refractive index smaller than and a band gap larger than the first and second cladding layers is formed between the first cladding layer and the active layer and/or between the active layer and the second cladding layer.

摘要翻译： 公开了一种具有自持脉动的半导体激光器，其中在第一导电半导体衬底上依次形成第一导电类型，有源层和具有条纹脊的第二导电类型的第二包层的第一包层 类型。 第一和第二覆层具有比有源层更大的折射率和更大的带隙。 在第一和第二包层中均形成有具有基本上等于与激发波长相对应的能量的能隙带的饱和光吸收层。 此外，在第一包层和有源层之间和/或有源层和第二包层之间形成折射率小于第一和第二包层的折射率的带隙的阻挡层。

公开(公告)号：US06339563B2

公开(公告)日：2002-01-15

申请号：US09725239

申请日：2000-11-29

申请人： Kazushi Mori ,  Atsushi Tajiri ,  Yasuaki Inoue ,  Takenori Goto ,  Minoru Sawada ,  Akira Ibaraki ,  Daisuke Ide

发明人： Kazushi Mori ,  Atsushi Tajiri ,  Yasuaki Inoue ,  Takenori Goto ,  Minoru Sawada ,  Akira Ibaraki ,  Daisuke Ide

IPC分类号： G11B7095

CPC分类号： G11B7/1353 ,  G11B7/0903 ,  G11B7/094

摘要： A grating surface of a diffraction grating diffracts a laser beam emitted from a semiconductor laser device in ±1st order directions. The grating surface is formed in a rectangular or elliptic shape in such dimensions that a light spot formed on an objective lens by ±1st order diffracted beams is located in an aperture of the objective lens and not displaced from the aperture even if the objective lens is horizontally moved in a tracking operation. A grating surface of another diffraction grating has a width smaller than the width of an overlap region of a light spot on the diffraction grating corresponding to a part of a beam, diffracted in the +1st direction, entering an objective lens and a light spot on the diffraction grating corresponding to a part of a beam, diffracted in the −1st direction, entering the objective lens.

摘要翻译： 衍射光栅的光栅表面衍射从半导体激光器件发射的激光束的±1级方向。 光栅表面形成为矩形或椭圆形，其尺寸使得物镜上形成的±1阶衍射光束的光点位于物镜的孔径中，即使物镜为 在跟踪操作中水平移动。 另一个衍射光栅的光栅表面的宽度小于衍射光栅上与光束的一部分相对应的光点的重叠区域的宽度，该光束的一部分在+ 1方向衍射，进入物镜和光点 衍射光栅对应于在第一方向衍射的光束的一部分，进入物镜。

公开(公告)号：US06501715B2

公开(公告)日：2002-12-31

申请号：US09998295

申请日：2001-12-03

申请人： Kazushi Mori ,  Atsushi Tajiri ,  Yasuaki Inoue ,  Takenori Goto ,  Minoru Sawada ,  Akira Ibaraki ,  Daisuke Ide

发明人： Kazushi Mori ,  Atsushi Tajiri ,  Yasuaki Inoue ,  Takenori Goto ,  Minoru Sawada ,  Akira Ibaraki ,  Daisuke Ide

IPC分类号： G11B7095

CPC分类号： G11B7/1353 ,  G11B7/0903 ,  G11B7/094

摘要： A grating surface of a diffraction grating diffracts a laser beam emitted from a semiconductor laser device in ±1st order directions. The grating surface is formed in a rectangular or elliptic shape in such dimensions that a light spot formed on an objective lens by ±1st order diffracted beams is located in an aperture of the objective lens and not displaced from the aperture even if the objective lens is horizontally moved in a tracking operation. A grating surface of another diffraction grating has a width smaller than the width of an overlap region of a light spot on the diffraction grating corresponding to a part of a beam, diffracted in the ±1st direction, entering an objective lens and a light spot on the diffraction grating corresponding to a part of a beam, diffracted in the −1st direction, entering the objective lens.

摘要翻译： 衍射光栅的光栅表面衍射从半导体激光器件发射的激光束的±1级方向。 光栅表面形成为矩形或椭圆形，其尺寸使得物镜上形成的±1阶衍射光束的光点位于物镜的孔径中，即使物镜为 在跟踪操作中水平移动。 另一个衍射光栅的光栅表面的宽度小于衍射光栅上与光束的一部分相对应的光点的重叠区域的宽度，该光束的一部分在±1度方向上衍射，进入物镜和光点 衍射光栅对应于在第一方向衍射的光束的一部分，进入物镜。

公开(公告)号：US06181667B2

公开(公告)日：2001-01-30

申请号：US09041008

申请日：1998-03-12

申请人： Kazushi Mori ,  Atsushi Tajiri ,  Yasuaki Inoue ,  Takenori Goto ,  Minoru Sawada ,  Akira Ibaraki ,  Daisuke Ide

发明人： Kazushi Mori ,  Atsushi Tajiri ,  Yasuaki Inoue ,  Takenori Goto ,  Minoru Sawada ,  Akira Ibaraki ,  Daisuke Ide

IPC分类号： G11B7135

CPC分类号： G11B7/1353 ,  G11B7/0903 ,  G11B7/094

摘要： A grating surface of a diffraction grating diffracts a laser beam emitted from a semiconductor laser device in ±1st order directions. The grating surface is formed in a rectangular or elliptic shape in such dimensions that a light spot formed on an objective lens by ±1st order diffracted beams is located in an aperture of the objective lens and not displaced from the aperture even if the objective lens is horizontally moved in a tracking operation. A grating surface of another diffraction grating has a width smaller than the width of an overlap region of a light spot on the diffraction grating corresponding to a part of a beam, diffracted in the +1st direction, entering an objective lens and a light spot on the diffraction grating corresponding to a part of a beam, diffracted in the −1st direction, entering the objective lens.

摘要翻译： 衍射光栅的光栅表面衍射从半导体激光器件发射的激光束的±1级方向。 光栅表面形成为矩形或椭圆形，其尺寸使得物镜上形成的±1阶衍射光束的光点位于物镜的孔径中，即使物镜为 在跟踪操作中水平移动。 另一个衍射光栅的光栅表面的宽度小于衍射光栅上与光束的一部分相对应的光点的重叠区域的宽度，该光束的一部分在+ 1方向衍射，进入物镜和光点 衍射光栅对应于在第一方向衍射的光束的一部分，进入物镜。

公开(公告)号：US5960019A

公开(公告)日：1999-09-28

申请号：US828034

申请日：1997-03-27

申请人： Nobuhiko Hayashi ,  Daisuke Ide ,  Akira Ibaraki

发明人： Nobuhiko Hayashi ,  Daisuke Ide ,  Akira Ibaraki

IPC分类号： H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/323 ,  H01S5/343 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/2231 ,  H01S5/204 ,  H01S5/2206 ,  H01S5/221 ,  H01S5/222 ,  H01S5/32316 ,  H01S5/3432

摘要： A semiconductor laser device comprises a cladding layer of a first conductivity type, an active layer, a cladding layer of a second conductivity type, and a current blocking layer having a stripe-shaped opening having a predetermined width W for restricting a current path and forming the current path, and having a larger band gap than that of the cladding layer of the second conductivity type and having a smaller refractive index than that of the cladding layer of the second conductivity type. A difference .DELTA.n between effective refractive indexes in a region, which corresponds to the opening, in the active layer and an effective refractive index in a region, which corresponds to both sides of the opening, in the active layer and the width W (.mu.m) of the opening are so set as to satisfy a predetermined relationship. The difference .DELTA.n between the effective refractive indexes is set by selecting the A1 composition ratio of the current blocking layer and the thickness of the cladding layer of the second conductivity type on the both sides of the opening.

摘要翻译： 半导体激光装置包括第一导电类型的包覆层，有源层，第二导电类型的包覆层和具有用于限制电流路径的预定宽度W的条形开口的电流阻挡层，并形成 电流路径，并且具有比第二导电类型的包层更大的带隙，并且具有比第二导电类型的包覆层的折射率更小的折射率。 与有源层中的开口对应的区域中的有效折射率与对应于开口的两侧的区域中的有效折射率在有效层中的有效折射率和宽度W（mu m）设定为满足规定的关系。 通过选择开口两侧的电流阻挡层的A1组成比和第二导电类型的包覆层的厚度来设定有效折射率之间的差ΔTAn。

公开(公告)号：US20060250592A1

公开(公告)日：2006-11-09

申请号：US11314955

申请日：2005-12-22

申请人： Yukihiro Noguchi ,  Shoichiro Matsumoto ,  Naoya Sotani ,  Daisuke Ide ,  Yasutaka Kobayashi ,  Yoshiyuki Ishizuka ,  Isao Hasegawa

发明人： Yukihiro Noguchi ,  Shoichiro Matsumoto ,  Naoya Sotani ,  Daisuke Ide ,  Yasutaka Kobayashi ,  Yoshiyuki Ishizuka ,  Isao Hasegawa

IPC分类号： G03B27/42

CPC分类号： G02F1/13454 ,  G02F1/136209 ,  G02F2001/133388

摘要： A display capable of inhibiting a transistor from an instable operation resulting from fluctuation of the potential of a shielding film and suppressing occurrence of a malfunction is provided. This display comprises a first region including a first transistor, a first shielding film provided on the first region, arranged on a region corresponding to the first transistor and supplied with a first potential, a second region including a second transistor and a second shielding film provided on the second region, arranged on a region corresponding to the second transistor and supplied with a second potential.

摘要翻译： 提供了能够抑制晶体管由于屏蔽膜的电位波动导致的不稳定操作并且抑制故障发生的显示器。 该显示器包括：第一区域，包括第一晶体管，设置在第一区域上的第一屏蔽膜，布置在与第一晶体管对应的区域中并被提供有第一电位;第二区域，包括第二晶体管和第二屏蔽膜， 在第二区域上布置在与第二晶体管相对应的区域上并且被提供第二电位。

公开(公告)号：US09252301B2

公开(公告)日：2016-02-02

申请号：US13594201

申请日：2012-08-24

申请人： Mitsuaki Morigami ,  Yuji Hishida ,  Daisuke Ide ,  Hitoshi Sakata ,  Takahiro Mishima ,  Hiroyuki Mori ,  Masato Shigematsu

发明人： Mitsuaki Morigami ,  Yuji Hishida ,  Daisuke Ide ,  Hitoshi Sakata ,  Takahiro Mishima ,  Hiroyuki Mori ,  Masato Shigematsu

IPC分类号： H01L31/068 ,  H01L31/0224 ,  H01L31/18 ,  H01L31/0747

CPC分类号： H01L31/022441 ,  H01L31/0682 ,  H01L31/0747 ,  H01L31/1804 ,  H01L31/1884 ,  Y02E10/547 ,  Y02P70/521

摘要： A solar cell includes semiconductor substrate of a first conductivity type; first semiconductor layer having a first conductivity type; second semiconductor layer having a second conductivity type; first electrode; second electrode; and insulating layer. First semiconductor layer and second semiconductor layer are formed on rear surface. When one end portion of insulating layer which is formed on first semiconductor layer and which is on a side close to first electrode is defined as first insulating-layer end portion and another end portion of insulating layer on a side close to second electrode is defined as second insulating-layer end portion in arrangement direction x, a distance from end point of second-semiconductor-layer end portion in contact with rear surface to second insulating-layer end portion in arrangement direction x is shorter than a distance from end point to first insulating-layer end portion in arrangement direction x.

摘要翻译： 太阳能电池包括第一导电类型的半导体衬底; 具有第一导电类型的第一半导体层; 具有第二导电类型的第二半导体层; 第一电极; 第二电极; 和绝缘层。 第一半导体层和第二半导体层形成在后表面上。 当形成在第一半导体层上并且靠近第一电极的一侧的绝缘层的一个端部被定义为第一绝缘层端部，并且绝缘层的靠近第二电极的一侧的绝缘层的另一端部被定义为 在布置方向x上的第二绝缘层端部，与布置方向x上的与背面至第二绝缘层端部接触的第二半导体层端部的端点的距离比从端点到第一的距离短 在排列方向x上的绝缘层端部。