发明授权
US5614444A Method of using additives with silica-based slurries to enhance
selectivity in metal CMP
失效
使用添加剂与二氧化硅基浆料以提高金属CMP中的选择性的方法
- 专利标题： Method of using additives with silica-based slurries to enhance selectivity in metal CMP
- 专利标题（中）： 使用添加剂与二氧化硅基浆料以提高金属CMP中的选择性的方法
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申请号： US469164申请日： 1995-06-06
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公开(公告)号： US5614444A公开(公告)日： 1997-03-25
- 发明人: Janos Farkas , Rahul Jairath , Matt Stell , Sing-Mo Tzeng
- 申请人： Janos Farkas , Rahul Jairath , Matt Stell , Sing-Mo Tzeng
- 申请人地址： TX Austin CA Santa Clara CA Santa Clara MA Maynard
- 专利权人： Sematech, Inc.,Intel Corporation,National Semiconductor Corp.,Digital Equipment Corp.
- 当前专利权人： Sematech, Inc.,Intel Corporation,National Semiconductor Corp.,Digital Equipment Corp.
- 当前专利权人地址： TX Austin CA Santa Clara CA Santa Clara MA Maynard
- 主分类号： H01L21/3105
- IPC分类号： H01L21/3105 ; H01L21/3213 ; H01L21/302
摘要：
A method of using additives with silica-based slurries to enhance metal selectivity in polishing metallic materials utilizing a chemical-mechanical polishing (CMP) process. Additives are used with silica-based slurries to passivate a dielectric surface, such as a silicon dioxide (SiO.sub.2) surface, of a semiconductor wafer so that dielectric removal rate is reduced when CMP is applied. The additive is comprised of at least a polar component and an apolar component. The additive interacts with the surface silanol group of the SiO.sub.2 surface to inhibit particles of the silica-based slurry from interacting with hydroxyl molecules of the surface silanol group. By applying a surface passivation layer on the SiO.sub.2 surface, erosion of the SiO.sub.2 surface is reduced. However, the metallic surface is not influenced significantly by the additive, so that the selectivity of metal removal over oxide removal is enhanced.
公开/授权文献
- US5173237A Method of making a metallic core assembly 公开/授权日：1992-12-22
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