发明授权
US5620926A Method for forming a contact with activation and silicide forming heat
treatment
失效
用激活和硅化物形成热处理形成接触的方法
- 专利标题： Method for forming a contact with activation and silicide forming heat treatment
- 专利标题（中）： 用激活和硅化物形成热处理形成接触的方法
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申请号： US503687申请日： 1995-07-18
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公开(公告)号： US5620926A公开(公告)日： 1997-04-15
- 发明人: Hiroshi Itoh
- 申请人： Hiroshi Itoh
- 申请人地址： JPX Tokyo
- 专利权人： NEC Corporation
- 当前专利权人： NEC Corporation
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX6-190190 19940721
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/265 ; H01L21/285 ; H01L21/3205 ; H01L21/768 ; H01L23/52
摘要：
A field oxide film 12, an n.sup.+ -type dispersion layer 13, and an interlayer insulating film 14 are formed on a p-type semiconductor substrate, and a contact hole is formed therein. A titanium film 15 is deposited on the surface formed thus far, and arsenic is ion-implanted into a contact region through the titanium film, forming a phosphorus-dispersed layer. The substrate is heat-treated to activate the impurity in the phosphorus-dispersed layer 16 and to cause titanium and silicon to react with each other, thereby forming a titanium silicide film 17 in the contact region. A metal film is then deposited and patterned into a metal wiring 18 without removing a silicon nitride film 15a which has been produced from the titanium film.
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