发明授权
- 专利标题： Method of forming a semiconductor strain sensor
- 专利标题（中）： 形成半导体应变传感器的方法
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申请号： US284292申请日： 1994-08-02
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公开(公告)号： US5622901A公开(公告)日： 1997-04-22
- 发明人: Tsuyoshi Fukada
- 申请人： Tsuyoshi Fukada
- 申请人地址： JPX Kariya
- 专利权人： Nippondenso Co., Ltd.
- 当前专利权人： Nippondenso Co., Ltd.
- 当前专利权人地址： JPX Kariya
- 优先权： JPX2-29863 19900208
- 主分类号： G01L9/04
- IPC分类号： G01L9/04 ; G01L1/22 ; G01L9/00 ; G01L23/18 ; H01L29/84 ; H01L21/77
摘要：
In a semiconductor strain sensor, for example, using resistors of a polycrystalline semiconductor material such as polycrystalline silicon as strain gauges, the sum of the temperature coefficient of resistance (TCR) of the resistor and the temperature coefficient of strain sensitivity (TCK) is adjusted not by controlling the impurity carrier concentration but by controlling the resistivity, thereby an output fluctuation due to a change in the temperature can be suppressed.