Invention Grant
- Patent Title: Low temperature formation of palladium silicided shallow junctions using implant through metal/silicide technology
- Patent Title (中): 通过金属/硅化物技术使用植入物来低温形成钯硅化的浅结
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Application No.: US448670Application Date: 1995-05-24
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Publication No.: US5624867APublication Date: 1997-04-29
- Inventor: Huang-Chung Cheng , Cheng-Tung Lin , Pei-Fen Chou
- Applicant: Huang-Chung Cheng , Cheng-Tung Lin , Pei-Fen Chou
- Applicant Address: TWX Taipei
- Assignee: National Science Council
- Current Assignee: National Science Council
- Current Assignee Address: TWX Taipei
- Main IPC: H01L21/225
- IPC: H01L21/225 ; H01L21/283
Abstract:
A low temperature process for forming palladium silicided shallow junctions in which ions are implanted into a palladium or a palladium silicide layer over a silicon substrate. The impurities are driven into the silicon substrate during the formation or recrystallization of the palladium silicide layer, and a diffusion region with shallow junction is formed in the substrate.
Public/Granted literature
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