Invention Grant
US5624885A Josephson junction device of oxide superconductor and process for
preparing the same
失效
氧化物超导体的约瑟夫逊结器件及其制备方法
- Patent Title: Josephson junction device of oxide superconductor and process for preparing the same
- Patent Title (中): 氧化物超导体的约瑟夫逊结器件及其制备方法
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Application No.: US526306Application Date: 1995-09-11
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Publication No.: US5624885APublication Date: 1997-04-29
- Inventor: Saburo Tanaka , Takashi Matsuura , Hideo Itozaki
- Applicant: Saburo Tanaka , Takashi Matsuura , Hideo Itozaki
- Applicant Address: JPX Osaka
- Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee Address: JPX Osaka
- Priority: JPX3-201220 19910716; JPX3-201221 19910716; JPX4-204372 19920708
- Main IPC: H01L39/22
- IPC: H01L39/22 ; H01L39/24
Abstract:
A Josephson junction device includes a substrate, an oxide thin film formed on a portion of the principal surface of the substrate, which is constituted of a single crystal of which lattices shift at angle of 45.degree. to that of the principal surface of the substrate. One of the two portions of the oxide superconductor thin film is formed on the oxide thin film and the other portion of the superconductor thin film is formed on the principal surface of the substrate directly so that the lattices of the two portions of the oxide superconductor thin film are respectively linear up to those of the oxide thin film and the principal surface of the substrate and the grain boundary. The grain boundary which constitutes a weak link of the Josephson junction is formed just on the step portion formed of the oxide thin film.
Public/Granted literature
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